Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

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• 作者：Hiroaki Arimura ; Shinya Horie ; Yudai Oku ; Takashi Minami ; Naomu Kitano ; Motomu Kosuda ; Takuji Hosoi ; Takayoshi Shimura ; Heiji Watanabe
• 关键词：High-k gate dielectric ; HfTiSiO ; In-situ process ; Ti diffusion ; Interface reaction ; Titanium nitride
• 刊名：Applied Surface Science
• 出版年：2008
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：30 July 2008
• 卷：254
• 期：19
• 页码：6119-6122
• 文件大小：430 K

摘要

We investigated the optimum structure for Ti-containing Hf-based high-k gate dielectrics to achieve EOT scaling below 1 nm. TiO₂/HfSiO/SiO₂ trilayer and HfTiSiO/SiO₂ bilayer structures were fabricated by a newly developed in-situ PVD-based method. We found that thermal diffusion of Ti atoms to SiO₂ underlayers degrades the EOT–J_g characteristics. Our results clearly demonstrated the impact of the trilayered structure with TiO₂ capping for improving EOT–J_g characteristics of the gate stack. We achieved an EOT scaling of 0.78 nm as well as reduced gate leakage of 7.2 × 10⁻² A/cm² for a TiO₂/HfSiO/SiO₂ trilayered high-k dielectric while maintaining the electrical properties at the bottom interface.