Analysis of the electrical characteristics of the Ag/ZnO Schottky barrier diodes on F-doped SnO₂ glass substrates by pulsed laser deposition

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• 作者：Xin&rsquo ; an Zhang ; Fusheng Hai ; Ting Zhang ; Caihong Jia ; Xianwen Sun ; Linghong Ding ; Weifeng Zhang ; ^{wfzhang@henu.edu.cn}
• 关键词：ZnO films ; Schottky barrier ; Series resistance ; Barrier height
• 刊名：Microelectronic Engineering
• 出版年：2012
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：May, 2012
• 卷：93
• 期：Complete
• 页码：5-9
• 文件大小：482 K

摘要

High quality semiconductor layer of n-type ZnO thin film was fabricated on F-doped SnO₂ glass substrates by pulsed laser deposition. The Schottky junction diodes with configuration of Ag/ZnO/FTO have been fabricated to study the devices electrical properties by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The results show that the devices have good rectifying behaviors with an ideality factor of 1.64 and a Schottky barrier height of 0.85 eV based on the I-V characteristics. Also, Cheung鈥檚 functions and Norde鈥檚 method were used to evaluate the I-V characteristics and to obtain the series resistance of the Schottky contact. From the C-V characteristics, the capacitance was determined to increase with decrease of frequencies. C-V measurements have resulted in higher barrier heights than those obtained from I-V measurements. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements was also interpreted.