Patterning of silicon – differences between nanosecond and femtosecond laser pulses

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• 作者：Weing&auml ; rtner ; M. ; Elschner ; R. ; Bostanjoglo ; O.
• 关键词：Laser ablation ; High-speed techniques ; Photoelectron emission microscopy ; Semiconductor microstructuring ; 79.20.D ; 06.60.J ; LC ; AB ; PG
• 刊名：Applied Surface Science
• 出版年：1999
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：January, 1999
• 卷：138-139
• 期：Complete
• 页码：499-502
• 文件大小：3.09 M

摘要

Si (100) surfaces were exposed to 8 ns and 100 fs laser pulses with fluences≤3 J/cm<sup>2sup> and ≤0.5 J/cm<sup>2sup>, respectively. Transient stages and final patterns were investigated by pulsed photoelectron microscopy and scanning electron plus light interference microscopy. Though the pattern formation extends for both pulse lengths over the same time of some 10 ns, the patterns are different. Nanosecond pulses produce smooth craters and remove a covering oxide. Femtosecond pulses ablate an oxide-free Si surface and produce flat pits covered by nanodrops, whereas oxide-covered surfaces are converted to a foam, which solidifies to a blistered structure.