Effects of UV and white light illuminations on photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor

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• 作者：Bayram Gunduz^a  ; [Author Vitae] ; Fahrettin Yakuphanoglu^b ; ^{fyhanoglu@firat.edu.tr} ; ^{fyhan@hotmail.com}  ; [Author Vitae]
• 关键词：TIPS-pentacene transistor ; Photoresponsivity ; UV and white light illuminations
• 刊名：Sensors and Actuators A ; Physical
• 出版年：2012
• 期刊代码：160_09244247
• 类别：et
• 出版时间：May, 2012
• 卷：178
• 期：Complete
• 页码：141-153
• 文件大小：2472 K

摘要

The effects of UV and white light illuminations on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor were investigated. The photosensitivity (I_ph/I_dark) values of the transistor in the OFF state were found to be 1.156 and 2.12 under UV 365 nm (for V_g = 鈭?0 V) and white light illuminations (for V_g = 鈭?0 V and P = 100 mW/cm²), respectively. The threshold voltage value of the TIPS-pentacene transistor was shifted from a smaller (0.215 V) value to higher (1.095 V) value with UV illumination, while it was shifted from a negative value (鈭?.29 V) to positive value (0.525 V) with white light illumination. The mobility 渭 value (3.412 脳 10^鈭? cm²/Vs) of the TIPS-pentacene transistor under dark is lower than that of the values under UV and white light illuminations. The sub-threshold swing value under dark is higher than that of under UV and white light illuminations. The interface trap density of the TIPS-pentacene transistor is decreased with increasing illumination. The lowest D_it value (0.941 脳 10¹³ eV^鈭? cm^鈭?) of the TIPS-pentacene transistor causes the highest mobility (6.322 脳 10^鈭? cm²/Vs). The photoresponsivity R values of the TIPS-pentacene transistor vary from 11.58 mA/W to 53.48 mA/W.