Engineering low resistance contacts on p-type hydrogenated diamond surfaces
详细信息查看全文 | 推荐本文 |
摘要
Gold is expected to form a relatively low barrier on hydrogenated thin film diamond, and this metallisation has therefore been widely used as the ‘ohmic’ contact for electronic devices fabricated using this material. However, gold contacts are not truly ‘ohmic’ and suffer from reliability problems associated with poor adhesion to the diamond surface. Furthermore, the contact properties of this system have not been studied in any detail.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700