Growth of In nanocrystallite arrays on the Si(1 0 0)-c(4 × 12)–Al surface
- 作者：D.V. Gruznev ; D.A. Olyanich ; V.A. Avilov ; A.A. Saranin ; A.V. Zotov
- 关键词：Nanoisland ; Si(1 0 0)-c(4 × ; 12)– ; Al ; Indium ; Scanning tunneling microscopy
- 刊名：Surface Science
- 出版年：2006
- 期刊代码：104_00396028
- 类别：ch
- 出版时间：15 November 2006
- 卷：600
- 期：22
- 页码：4986-4991
- 文件大小：846 K
摘要
Using scanning tunneling microscopy, growth of In nanoisland arrays on the Si(1 0 0)-c(4 × 12)–Al surface has been studied for In coverage up to 1.1 ML and substrate temperature from room temperature to 150 °C. In comparison to the case of In deposition onto the clean Si(1 0 0) surface or Si(1 0 0)4 × 3–In reconstruction, the In growth mode is changed by the c(4 × 12)–Al reconstruction from the 2D growth to 3D growth, thus displaying a vivid example of the Volmer–Weber growth mode. Possible crystal structure of the grown In nanoislands is discussed.