Structural and optical properties of an In_xGa_1−xN/GaN nanostructure

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• 作者：Sabit Kor&#xe7 ; ak ; M. Kemal Ö ; ztü ; rk ; Sü ; leyman Ç ; ö ; rek&#xe7 ; i ; Barı ; ş ; Akaoğ ; lu ; Hongbo Yu ; Mehmet Ç ; akmak ; Semran Sağ ; lam ; Sü ; leyman Ö ; z&#xe7 ; elik
• 关键词：Metalorganic chemical vapor deposition ; In_<i>xi>Ga₁₋ ; <i>xi>N/GaN ; X-ray reflectivity ; Photoluminescence ; Atomic force microscopy ; Ellipsometry
• 刊名：Surface Science
• 出版年：2007
• 期刊代码：104_00396028
• 类别：ch
• 出版时间：15 September 2007
• 卷：601
• 期：18
• 页码：3892-3897
• 文件大小：796 K

摘要

The structural and optical properties of an In_<i>xi>Ga_1−<i>xi>N/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on <i>ci>-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.