SiC MOSFETs with thermally oxidized Ta<sub>2sub>Si stacked on SiO<sub>2sub> as high-k gate insulator

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• 作者：A. P&#xe9 ; rez-Tom&#xe1 ; s ; M.R. Jennings ; P.M. Gammon ; G.J. Roberts ; P.A. Mawby ; J. Mill&#xe1 ; n ; P. Godignon ; J. Montserrat ; N. Mestres
• 关键词：SiC ; Ta<sub>2sub>Si ; Tantalum silicide ; Oxidation ; High-k dielectric ; MOSFET
• 刊名：Microelectronic Engineering
• 出版年：2008
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April 2008
• 卷：85
• 期：4
• 页码：704-709
• 文件大小：725 K

摘要

In this paper, we compare the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta<sub>2sub>Si (O-Ta<sub>2sub>Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO<sub>2sub> on SiC. MOS capacitors are used to determine the dielectric and interfacial properties of these insulators. We demonstrate that stacked SiO<sub>2sub>/O-Ta<sub>2sub>Si is an attractive solution for passivation of innovative SiC devices. Ta<sub>2sub>Si deposition and oxidation is totally compatible with standard SiC MOSFET fabrication materials and processing. We demonstrate correct transistor operation for stacked O-Ta<sub>2sub>Si on thin thermally grown SiO<sub>2sub> oxides. However the channel mobility of such high-k MOSFETs must be improved investigating the interface properties further.