Atomic - vapour - deposited HfO₂ and Sr₄Ta₂O₉ layers for metal-insulator-metal applications

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• 作者：M. Lukosius ; Ch. Wenger ; T. Schroeder ; J. Dabrowski ; R. Sorge ; I. Costina ; H.-J. M&#xfc ; ssig ; S. Pasko ; Ch. Lohe
• 关键词：Sr₄Ta₂O₉ ; HfO₂ ; Oxide ; Thin films ; MIM ; AVD
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：September-October 2007
• 卷：84
• 期：9-10
• 页码：2165-2168
• 文件大小：337 K

摘要

Sr₄Ta₂O₉ and HfO₂ films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal budget of CMOS back end of line. Electrical properties have been investigated in metal-insulator-metal capacitors after sputter deposition of Au top electrodes. Both Sr₄Ta₂O₉ and HfO₂ dielectrics show excellent electrical performances. Oxides possess high capacitance densities of 3.5 fF/μm²(HfO₂) and 4.5 fF/μm² (Sr₄Ta₂O₉) in combination with high voltage linearity (α < 100ppm/V²). Sr₄Ta₂O₉ MIM capacitors provide lower leakage currents at 2 V, while HfO₂ MIMs offer higher operating voltage values for 10 years lifetime than Sr₄Ta₂O₉ based capacitors. The dielectric breakdown fields of HfO₂ (5.8 MV/cm) and Sr₄Ta₂O₉ (3.2 MV/cm) were obtained from I(V) characteristics.