Morphology control of gallium nitride grown on silicon nanoporous pillar array: From cone-strings to nanowires
- 作者：Chang Bao Han ; Chuan He ; Xin Jian Li ; lixj@zzu.edu.cn
- 关键词：A1. Nanostructures ; A3. Chemical vapor deposition ; B1. Gallium nitride ; B1. Silicon nanoporous pillar array (Si-NPA)
- 刊名：Journal of Crystal Growth
- 出版年：2012
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：15 July, 2012
- 卷：351
- 期：1
- 页码：155-160
- 文件大小：1197 K
摘要
Fascicle arrays of gallium nitride (GaN) nanostructures were grown on silicon nanoporous pillar array (Si-NPA) by a reactive chemical vapor deposition method. Through adjusting the distance between the gallium source and Si-NPA substrate, the morphology of GaN nanostructures was tuned from cone-strings, cone-strings plus nanowires to nanowires, accompanied with the average diameter changed from 鈭?00 nm to 鈭?3 nm. Both the cone-strings and the nanowires were found growing along [0001] direction. These results indicate that Ga concentration is a key factor in determining both the morphology and the average diameter of GaN nanostructures. The growing process of the GaN nanostructures was explained under the frame of vapor-liquid-solid deposition mechanism. Our method might be expanded to the growth of other compound semiconductor nanostructures on patterned silicon substrates for constructing functional nanodevices.