Enhancement of in-field critical current density by irradiation of MeV-energy ions in YBCO films prepared by fluorine-free metal-organic deposition

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• 作者：H. Matsui ; ^{h.matsui@aist.go.jp} ; H. Ogiso ; H. Yamasaki ; M. Sohma ; I. Yamaguchi ; T. Kumagai ; T. Manabe
• 关键词：YBa2Cu3O7 ; metal-organic deposition ; ion implantation ; critical current density ; artificial pinning center
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：27
• 期：Complete
• 页码：276-279
• 文件大小：513 K

摘要

We performed irradiation of epitaxial YBa2Cu3O7 films grown on CeO2-buffered SrTiO3 substrates by fluorine-free metal organic deposition with 3-MeV Fe2+ ions to study their effects on critical current density (Jc). We observed an increase of in-field Jc by up to 70%, which did not show a significant field-angle dependence. Since the ion energy used in this study is two orders of magnitude lower than those in majority of the previous works with a similar concept, our results indicate that the enhancement of Jc by ion irradiation in high-temperature superconducting films has wider processing window than previously recognized.