High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers
- 作者：Kazunari Kuwahara ; k.kuwahara@plasma.ed.kyushu-u.ac.jp ; Naho Itagaki ; Kenta Nakahara ; Daisuke Yamashita ; Giichiro Uchida ; Kunihiro Kamataki ; Kazunori Koga ; Masaharu Shiratani
- 关键词：Zinc oxide ; Solid-phase crystallization ; Magnetron sputtering ; Light emitting diode ; Buffer layer ; Epitaxy
- 刊名：Thin Solid Films
- 出版年：2012
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：1 May, 2012
- 卷：520
- 期：14
- 页码：4674-4677
- 文件大小：429 K
摘要
High quality epitaxial ZnO films on sapphire (110) plane have been fabricated on ZnO homo-buffer layers crystallized via solid-phase epitaxially (SPE). The SPE-ZnO films are fabricated by annealing of amorphous ZnON (a-ZnON) films deposited by RF magnetron sputtering. During annealing, the a-ZnON films are oxidized and converted to ZnO crystal. X-ray diffraction (XRD) analysis shows that the resultant films are epitaxially grown on the sapphire substrates. By using the SPE-ZnO films as homo-buffer layers, the ZnO films with high crystallinity, which are deposited by RF magnetron sputtering, are fabricated. The full width at half-maximum of XRD patterns for 2胃-蠅 and 蠅 scan of (002) plane are 0.094掳 and 0.12掳, respectively, being significantly small compared with 0.24掳 and 0.55掳 for the films without buffer layers. Thus utilizing SPE buffer layers is very promising to obtain epitaxial ZnO films with high crystallinity.