Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes
- 作者：Weifeng Liu ; Guotong Du ; Yanfeng Sun ; Yibin Xu ; Tianpeng Yang ; Xinsheng Wang ; Yuchun Chang ; Fabin Qiu
- 关键词：Al-doped zinc oxide ; Zin oxide ; Hydrogen ; Sputtering ; Transparent conductive oxides
- 刊名：Thin Solid Films
- 出版年：2007
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：22 January 2007
- 卷：515
- 期：5
- 页码：3057-3060
- 文件大小：242 K
摘要
Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.%ZnO, 2 wt.%Al2O3) in different Ar + H2 ambient at a substrate temperature of 200 °C. To investigate the influence of H2-flow on the properties of AZO films, H2-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H2-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10− 4 Ω cm and the high average transmittance more than 92%in the visible range were obtained for the samples prepared in the optimal H2-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H2-flow on the structure and composition of AZO films have also been studied.