Epitaxial growth of HfB2(0 0 0 1) on Si(0 0 1) by etching through a SiO2 layer
- 作者：Yu Yang ; John R. Abelson
- 关键词：A1. Crystal morphology ; A3. Chemical vapor deposition processes ; B1. Metal diborides
- 刊名：Journal of Crystal Growth
- 出版年：2008
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：15 June 2008
- 卷：310
- 期：13
- 页码：3197-3202
- 文件大小：973 K
摘要
Using the single-source chemical vapor deposition (CVD) precursor Hf(BH4)4, HfB2 films can be grown epitaxially on Si substrates at 1000 °C by etching through a pre-existing SiO2 layer. Despite the different symmetries in the plane of the interface, the film is oriented with HfB2 (0 0 0 1)
Si(0 0 1) and the X-ray rocking curve is exceptionally sharp, with full-width at half-maximum (FWHM)=0.076°. Top-view scanning electron microscope (SEM) micrographs show that the film consists of micrometer size domains on the substrate. X-ray pole figures and electron backscattering diffraction studies indicate the existence of four types of domains with in-plane orientations rotated 45° from each other, HfB2[2 1 1 0]Si[1 0 0] and HfB2[2 1 1 0]Si[1 1 0].
Si(0 0 1) and the X-ray rocking curve is exceptionally sharp, with full-width at half-maximum (FWHM)=0.076°. Top-view scanning electron microscope (SEM) micrographs show that the film consists of micrometer size domains on the substrate. X-ray pole figures and electron backscattering diffraction studies indicate the existence of four types of domains with in-plane orientations rotated 45° from each other, HfB2[2 1 1 0]Si[1 0 0] and HfB2[2 1 1 0]Si[1 1 0].