The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface
- 作者：Chen Yang ; yangchen931@hotmail.com ; yangchen931@163.com ; Zhiming Chen ; Jichao Hu ; Zhanqiang Ren ; Shenghuang Lin
- 关键词：A. Semiconductors ; A. Interfaces ; B. Epitaxial growth ; C. Electron microscopy ; D. Crystal structure
- 刊名：Materials Research Bulletin
- 出版年：2012
- 期刊代码：60_00255408
- 类别：ms
- 出版时间：June, 2012
- 卷：47
- 期：6
- 页码：1331-1334
- 文件大小：734 K
摘要
Due to a huge lattice mismatch of about 20%theoretically existing between SiC and Si, it is difficult for growing monocrystalline Si/SiC heterojunction to realize the light control of SiC devices. However, based on a 4:5 Si-to-SiC atomic lattice matching interface structure, the monocrystalline Si films were epitaxially prepared on the 6H-SiC (0 0 0 1) substrate by hot-wall chemical vapor deposition in our work. The film was characterized by X-ray diffraction analysis with only (1 1 1) orientation occurring. The X-ray rocking curves illustrated good symmetry with a full width at half maximum of 0.4339掳 omega. A 4:5 Si-to-SiC atomic matching structure of the Si/6H-SiC interface clearly observed by the transmission electron microscope revealed the essence of growing the monocrystalline Si film on the SiC substrate.