Microstructure and Property of Self-format Graded Diffusion Barrier in Cu(Zr)/ZrN Film System

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• 作者：Zhongxiao Song ; ^{zhongxiaosong@mail.xjtu.edu.cn} ; Yanhuai Li ; ^{liyanhuai@msn.com} ; Guohua He ; Ling Yao ; Jiaan Wang ; Shengwu Guo ; Kewei Xu
• 关键词：61.46.Hk ; 66.30.-h ; 68.37.-d
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：32
• 期：Complete
• 页码：645-650
• 文件大小：1057 K

摘要

In this paper, Cu(Zr)/ZrN alloy film system on Si(100) substrates were sputtered using magnetron co-sputtering technology. The Cu films sputtered with magnetron sputtering were used as control experiments. Microstructure and properties of the films system were investigated by four-Point Probe (FPP) sheet-resistance measurement, XRD, HRTEM respectively. After annealed at 500掳C, Cu(Zr)/ZrN/Si system films self-formed a layer about 5 nm between the alloy layer and ZrN interface, which was an self-format amorphous Zr-rich barrier layer. Therefore, a gradient Zr/ZrN double-diffusion barrier layer can effectively block the interaction between Cu and Si substrate.