ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties
- 作者：Xiao-Yu Liu<sup>asup><sup> ; sup><sup>bsup> ; Ying-Ai Li<sup>csup> ; Shi Liu<sup>asup><sup> ; sup><sup>bsup> ; Hong-Lin Wu<sup>asup><sup> ; sup><sup>bsup><sup> ; sup><sup>dsup> ; Hai-Ning Cui<sup>asup><sup> ; sup><sup>bsup><sup> ; sup><sup>cuihaining2009@126.comsup>
- 关键词：Zinc oxide ; Copper ; Multilayer ; Oxygen gas ; Optical properties ; Electrical properties ; X-ray diffraction ; Sputtering
- 刊名：Thin Solid Films
- 出版年：2012
- 期刊代码：78_00406090
- 类别：ph
- 出版时间：1 June, 2012
- 卷：520
- 期：16
- 页码：5372-5377
- 文件大小：1204 K
摘要
A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O<sub>2sub>/Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O<sub>2sub>/Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O<sub>2sub>/Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm).