Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE

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• 作者：Kangawa ; Yoshihiro ; Kawaguchi ; Norihito ; Kumagai ; Yoshinao ; Koukitu ; Akinori
• 关键词：68.55.Jk ; 68.35.Dv ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides
• 刊名：Journal of Crystal Growth
• 出版年：2004
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：December 10, 2004
• 卷：272
• 期：1-4
• 页码：444-448
• 文件大小：335 K

摘要

We carried out Nd:YAG pulse laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of InGaN at low temperatures in order to obtain films with high indium content. The results suggest that the reaction rate between group-III source gas and ammonia is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser may enhance the surface migration of the elements, and crystalline quality becomes good. These results imply that LMOVPE using Nd:YAG pulse laser is useful for the low-temperature growth of InGaN.