Thermodynamic analysis of InN and In_xGa_1−xN MOVPE using various nitrogen sources

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• 作者：Kumagai ; Yoshinao ; Kikuchi ; Jun ; Matsuo ; Yuriko ; Kangawa ; Yoshihiro ; Tanaka ; Ken ; Koukitu ; Akinori
• 关键词：05.70.&minus ; a ; 81.05.Ea ; 81.10.Bk ; 81.15.Gh ; A1. Thermodynamic analysis ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides
• 刊名：Journal of Crystal Growth
• 出版年：2004
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：December 10, 2004
• 卷：272
• 期：1-4
• 页码：341-347
• 文件大小：286 K

摘要

The growth of InN and In_xGa_1−xN by metalorganic vapor-phase epitaxy (MOVPE) using ammonia (NH₃), hydrazine (N₂H₄), monomethylhydrazine (MMHy), 1,1-dimethylhydrazine (1,1-DMHy) and 1,2-DMHy as nitrogen sources is examined by thermodynamic analysis. The equilibrium partial pressures of gaseous species are calculated for various deposition conditions in order to determine the deposition mode, etching conditions, In droplet formation and growth, and solid composition of the grown In_xGa_1−xN. In contrast to the NH₃ system, the use of N₂H₄, MMHy, 1,1-DMHy or 1,2-DMHy allows InN growth over a wide range of input V/III ratios. Also shown is that the composition-unstable growth of In_xGa_1−xN that occurs in the NH₃ system is not observed in the N₂H₄, MMHy, 1,1-DMHy and 1,2-DMHy systems.