Effect of the growth temperature on the properties of Al_xGa_{l鈭?span style='font-style: italic'>x}N epilayers grown by HVPE

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• 作者：Ji-Sun Lee^a ; ^c ; Dongjin Byun^a ; Hae-Kon Oh^b ; Young Jun Choi^b ; Hae-Yong Lee^b ; Jin-Ho Kim^c ; Tae-Young Lim^c ; Jonghee Hwang^c ; ^{jhhwang@kicet.re.kr}
• 关键词：A1. Compositional non-uniformity ; A1. Growth temperature ; A3. HVPE ; B1. AlGaN
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 May, 2012
• 卷：346
• 期：1
• 页码：83-88
• 文件大小：1419 K

摘要

Growth of the Al_xGa_1鈭?em>xN ternary alloy using AlCl₃ and GaCl gases on sapphire substrate by hydride vapor phase epitaxy (HVPE) is presented in this study. Al_xGa_1鈭?em>xN epilayers were grown directly on sapphire substrate. To investigate the effect of growth temperature, we varied temperature from 1050 to 1090 掳C at intervals of 20 掳C. Some compositional non-uniformity was observed on the epilayer grown at 1050 掳C from the results of UV-vis spectrophotometry, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Such a compositional non-uniformity disappeared with the increase of growth temperature and it was confirmed with the existence of Ga-rich islands shown by electron probe microanalysis (EPMA) compositional mapping. In addition, other characteristics such as surface roughness and crystallinity also improved with the increase of growth temperature and showed best results at 1090 掳C. The Al composition of epilayer grown at 1090 掳C was around 30%.