Fabrication of a depletion mode GaAs MOSFET using Al₂O₃ as a gate insulator through the selective wet oxidation of AlAs

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• 作者：Jun ; Bon-Keun ; Kim ; Dong-Hwan ; Leem ; Jae-Young ; Lee ; Jung-Hee ; Lee ; Yong-Hyun
• 关键词：GaAS MOSFET ; Molecular beam epitaxy ; Al₂O₃ gate insulator ; Selective wet thermal oxidation
• 刊名：Thin Solid Films
• 出版年：2000
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：February 1, 2000
• 卷：360
• 期：1-2
• 页码：229-232
• 文件大小：271 K

摘要

A 1 μm thick undoped GaAs buffer layer, a 1500 Å thick n-type GaAs layer, an undoped 500 Å thick AlAs layer and a 50 Å thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate. The AlAs layer was oxidized in a N₂ bubbled H₂O vapor ambient at 400°C for 3 h and fully converted to Al₂O₃ for use as a gate insulator. The I–V characteristics, having a maximum drain current of 10.6 mA, a current cut-off voltage of −4.5 V and a maximum transconductance value of 11.25 mS/mm, indicate that the selective wet thermal oxidation of AlAs/GaAs was successful in producing a depletion mode GaAs MOSFET.