Response improvement for In₂O₃-TiO₂ thick film gas sensors

详细信息	查看全文 | 推荐本文 |

• 作者：Mao Lin Zhang ; Jian Ping Song ; Zhan Heng Yuan ; ^{zh.yuan.xjtu@gmail.com} ; Cheng Zheng
• 关键词：In2O3&ndash ; TiO2 ; Gas sensor ; Response time ; Platinum modified
• 刊名：Current Applied Physics
• 出版年：2012
• 期刊代码：15_15671739
• 类别：ph
• 出版时间：May, 2012
• 卷：12
• 期：3
• 页码：678-683
• 文件大小：761 K

摘要

In₂O₃ is introduced into TiO₂ by sol-gel method to improve the response/recovery rate and expand the operating temperature, when the In₂O₃-TiO₂ mixed system is exposed to H₂/O₂. The sensor is fabricated by thick film technology. Influence of In₂O₃ on the film phase composition, microstructure and sensing characteristics is discussed. Dynamic response properties show that the operating temperature of the mixed system is at 500-800聽掳C, which is about 600-800聽掳C for pure TiO₂. Response time of the sensor is about 200-260聽ms (millisecond) while recovery time is in a narrow range of 60-280聽ms at 600-800聽掳C. The promoting mechanism is suggested to arise from the introduction of In₂O₃ and grain size effect of the sensing film. Then In₂O₃-TiO₂ thick films are surface-modified by Pt using chloroplatinic acid. The promoting effect of Pt dispersed on the mixed system is also investigated.