Patterned silicon-on-insulator technology for RF Power LDMOSFET

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• 作者：Xinhong Cheng ; Zhaorui Song ; Yemin Dong ; Yuehui Yu and DaShen Shen
• 关键词：Patterned SOI ; LDMOS ; Floating body effect
• 刊名：Microelectronic Engineering
• 出版年：2005
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：2005
• 卷：81
• 期：1
• 页码：150-155
• 文件大小：226 K

摘要

This paper presents the first results of a practical SOI LDMOSFET in patterned SOI substrate that has been successfully prepared by masked SIMOX method. The device exhibits good electrical performance including a leakage current of 20 nA, the flat output characteristic curves, a cutoff frequency up to 8 GHz, and a voltage gain of 2.5 dB at 2 GHz. The proposed technology not only suppresses floating body effects effectively but also preserves SOI technology’s advantage of low power assumption. Moreover, the process is compatible with conventional SOI technology.