In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO₂ and carbon

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• 作者：Jin-Seok Lee ; Yun-Ki Byeun ; Sang-Hoon Lee ; Sung-Churl Choi
• 关键词：Silicon carbide ; Nanostructure ; Scanning and transmission electron microscopy ; Calorimetry
• 刊名：Journal of Alloys and Compounds
• 出版年：2008
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：29 May 2008
• 卷：456
• 期：1-2
• 页码：257-263
• 文件大小：1019 K

摘要

Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO₂ containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor–liquid–solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO₂ material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.