Structure, magnetism and electrical conductivity of a new ternary manganese oxide: BaMn₃O₆

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• 作者：Wakiya ; Koji ; Sato ; Hirohiko ; Miyazaki ; Akira ; Enoki ; Toshiaki ; Isobe ; Masahiko ; Ueda ; Yutaka
• 关键词：Manganese oxides ; Mixed-valence ; Mott insulator ; Antiferromagnetism ; Frustration ; Semiconductor ; Jahn&ndash ; Teller effect
• 刊名：Journal of Alloys and Compounds
• 出版年：2001
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：April 12, 2001
• 卷：317-318
• 期：Complete
• 页码：115-119
• 文件大小：412 K

摘要

The structure, magnetic susceptibility and conductivity of a newly synthesized manganese oxide (BaMn₃O₆) are reported. Single crystal structure analysis revealed a layered structure. Two types of layers, (I) double layers composed of edge-shared MnO₆ octahedra and (II) perovskite-like layers composed of vertex-shared MnO₆, are stacked alternatively. All MnO₆ octahedra are strongly distorted due to the Jahn–Teller effect. Although the chemical formula BaMn₃O₆ indicates a mixed-valence state of Mn³⁺ and Mn⁴⁺, the electrical conductivity shows an activation-type temperature dependence, suggesting a semiconductive band structure or Mott-type insulating electronic states. Magnetic susceptibility measurement revealed an antiferromagnetic transition at T_N