An anode with aluminum doped on zinc oxide thin films for organic light emitting devices
- 作者：Denghui Xu ; Zhenbo Deng ; Ying Xu ; Jing Xiao ; Chunjun Liang ; Zhiliang Pei and Chao Sun
- 关键词：Aluminum doped zinc oxide (AZO) ; Transparent conducting oxide (TCO) ; Organic light emitting diodes (OLEDs)
- 刊名：Physics Letters A
- 出版年：2005
- 期刊代码：57_03759601
- 类别：ph
- 出版时间：2005
- 卷：346
- 期：1-3
- 页码：148-152
- 文件大小：227 K
摘要
Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150 °C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt%in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was mathId=mml1&_user=10&_cdi=5538&_rdoc=23&_handle=V-WA-A-W-BY-MsSAYZW-UUA-U-AABZWDCBCV-AABBYCZACV-CADVWDVUD-BY-U&_acct=C000050221&_version=1&_userid=10&md5=1c1f9d75eb0914e643cec67f7c420bba">
mageURL/B6TVM-4GV2PCB-1-D/0?wchp=dGLbVtb-zSkWz" alt="Click to view the MathML source" align="absbottom" border="0" height=14 width=100> and the average transmission in the visible range 400–700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm2.