Microstructural, optical and electrical studies on sol gel derived ZnO and ZnO:Al films
- 作者：Yasemin Caglar ; yasemincaglar@anadolu.edu.tr ; ycaglar@semiconductorslab.com ; Mü ; jdat Caglar ; Saliha Ilican
- 关键词：ZnO film ; Sol gel ; Microstructure ; Electrical conductivity
- 刊名：Current Applied Physics
- 出版年：2012
- 期刊代码：15_15671739
- 类别：ph
- 出版时间：May, 2012
- 卷：12
- 期：3
- 页码：963-968
- 文件大小：1359 K
摘要
ZnO and ZnO:Al films were deposited onto glass substrates by the sol gel method using spin coating technique. The effects of aluminum dopant on the crystalline structure and orientation of the ZnO films have been investigated by X-ray diffraction (XRD) study. Surface morphology of the films has also been analyzed by a field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The average optical transmittance values of all the films is over >83%in the visible region. The optical band gap and Urbach energy values of these films were determined. The absorption edge shifted to the lower energy depending on the Al doping level. The shift of absorption edge is associated with shrinkage effect. The electrical conductivity of the ZnO film enhanced with the Al dopant. From the temperature dependence of conductivity measurements, the activation energy of the films was also calculated.