Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn

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• 作者：Rengang Zhang^a ; ^{whzrg@126.com} ; ^{zhangrengang@wust.edu.cn} ; Baoyi Wang^b ; Long Wei^b ; Xin Li^a ; Qianshan Xu^a ; Shunjin Peng^a ; Ibrahim Kurash^b ; Haijie Qian^b
• 关键词：ZnS thin films ; Sputtering ; Sulfidation
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：29 February, 2012
• 卷：86
• 期：8
• 页码：1210-1214
• 文件大小：690 K

摘要

ZnS thin films with the hexagonal structure have been produced by sulfurizing sputter deposited Zn in sulfur vapor for 1聽h. These films have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), synchrotron radiation photoelectron spectroscopy (SR-PES), Auger electron spectroscopy (AES) and UV-VIS transmission spectra. It is found that at the sulfidation temperature (T_S) of 400聽掳C a little and partial Zn can be transformed to ZnS. At T_S聽=聽500聽掳C, the total conversion of Zn in sulfur vapor can take place and form ZnS with a c-axis preferred orientation. The Zn-to-ZnS conversion is kinetically a reactive diffusion process. Also the ZnS thin film has much greater size of grains than the as-deposited Zn film, due to ZnS recrystallization and growth in sulfur vapor. Residual sulfur existing on the surface of ZnS grains leads to the poor optical transparency and great broadening of absorbing edge in the optical transmittance. However, ZnS thin film prepared by gradient sulfidation exhibits the improved optical transmittance, with a band-gap energy of 3.64聽eV.