Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

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• 作者：Seung Wook Shin^a ; G.L. Agawane^b ; Myeng Gil Gang^b ; A.V. Moholkar^c ; Jong-Ha Moon^b ; Jin Hyeok Kim^b ; ^{jinhyeok@chonnam.ac.kr} ; Jeong Yong Lee^a ; ^{j.y.lee@kaist.ac.kr}
• 关键词：ZnS ; Buffer layer ; Thin film solar cells ; Chemical bath deposition ; Complexing agent
• 刊名：Journal of Alloys and Compounds
• 出版年：2012
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：15 June, 2012
• 卷：526
• 期：Complete
• 页码：25-30
• 文件大小：860 K

摘要

Zinc sulfide (ZnS) thin films were prepared on glass substrates by a chemical bath deposition technique using aqueous zinc acetate and thiourea solutions in a basic medium (pH 鈭?#xA0;10) at 80 掳C. The effects of different complexing agents, such as a non-complexing agent, Na₃-citrate, and a mixture of Na₃-citrate and ethylenediamine tetra-acetate (EDTA), on the structural, chemical, morphological, optical, and electrical properties of ZnS thin films were investigated. X-ray diffraction pattern showed that the ZnS thin film deposited without any complexing agent was grown on an amorphous phase. However, the ZnS thin films deposited with one or two complexing agents showed a polycrystalline hexagonal structure. No secondary phase (ZnO) was observed. X-ray photoelectron spectroscopy showed that all ZnS thin films exhibited both ZnS and ZnOH bindings. Field emission scanning electron microscopy (FE-SEM) images showed that ZnS thin films deposited with complexing agents had thicker thicknesses than that deposited without a complexing agent. The electrical resistivity of ZnS thin films was over 10⁵ 惟 cm regardless of complexing agents. The average transmittance of the ZnS thin films deposited without a complexing agent, those with Na₃-citrate, and those with a mixture of Na₃-citrate and EDTA was approximately 85%, 65%, and 70%, respectively, while the band gap was found to be 3.94 eV, 3.87 eV, and 3.84 eV, respectively.