Pulse amplitude distributions of avalanche photodetectors with a metal-resistive layer-semiconductor structure and a 7-mm2 photosensitive area are investigated in the photon-counting mode. It is shown that p-n junction heterogeneities in a space charge region affect the shape of amplitude distributions of photocurrent pulses, as the overvoltage increases and light spot changes its position on the photosensitive area. The comparative analysis of the amplitude characteristics of the above avalanche photodetectors and commercial ΦД-115д avalanche photodiodes is conducted.