Applications of atomic layer chemical vapor deposition for the processing of nanolaminate structures
| 详细信息 | 推荐本文 | |
- 作者：Kijung Yong (1) kyong@postech.ac.kr
Joonhee Jeong (1) - 关键词：Key words Atomic Layer Chemical Vapor Deposition ; Self ; limiting Chemisorption ; Nano ; Deposition ; Gate Oxide ; Capacitor Dielectric Thin Film
- 刊名：Korean Journal of Chemical Engineering
- 出版时间：May 2002
- 出版年：2002
- 期刊代码：pc360_0256-1115
- 类别：ch
- 卷：19
- 期：3
- 页码：451-462
- 数据来源：sp
摘要
Atomic layer chemical vapor deposition (ALCVD) is a variant of a CVD process that involves surface deposition for the controlled growth of nano-thickness films. ALCVD is based on the self-limiting surface reaction with less than a monolayer chemisorption of chemical precursors. Advantages of the ALCVD process are uniform film growth on large area substrate, easy control of composition in atomic level, low growth temperature, multi-layer thin film growth with various composition, and wide process window. Since initially developed by Suntola in 1977, ALCVD has been used for the growth of various materials, including oxides, nitrides, metals, elements, and compound semiconductors. This article reviews the basic principle, mechanism, characteristics, and applications of ALCVD.