Experimental Evidence for Formation of Ni-Al Compoundin Flip-Chip Joints Under Current Stressing

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• 作者：M. Y. Tsai (1)
  Y. L. Lin (1)
  M. H. Tsai (1)
  Y. J. Chen (1)
  C. R. Kao (1) crkao@ntu.edu.tw
• 关键词：Flip chip &#8211 ; intermetallic &#8211 ; electromigration
• 刊名：Journal of Electronic Materials
• 出版时间：October 2011
• 出版年：2011
• 期刊代码：pc348_0361-5235
• 类别：ch
• 卷：40
• 期：10
• 页码：2076-2080
• 数据来源：sp

摘要

The materials interactions on the under bump metallization (UBM) side of flip-chip solder joints during current stressing were studied by using high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). Flip-chip solder joints with sputtered Al/Ni(V)/Cu UBM were subjected to current stressing at an ambient temperature of 150掳C. It was found that a layer of Ni-Al phase, presumably NiAl₃ according to energy-dispersive x-ray spectroscopy (EDX) measurements, was observed at the Al/Ni(V) interface. In addition, evidence for the formation of a nonconductive oxide layer at the NiAl₃/Ni(V) interface was observed. This nonconductive oxide layer was responsible for diverting electron current away from the porous region.