M枚ssbauer study of Fe in 3C-SiC following ⁵⁷Mn implantation

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• 作者：K. Bharuth-Ram ; H. P. Gunnlaugsson ; R. Mantovan ; V. V. Naicker ; D. Naidoo ; R. Sielemann ; G. Weyer ; Th. Aigne and ISOLDE Collaboration
• 关键词：3C ; SiC ; 57Mn implantation ; M枚ssbauer spectroscopy ; Fe sites
• 刊名：Hyperfine Interactions
• 出版时间：June, 2008
• 出版年：2008
• 期刊代码：18_03043843
• 类别：cp
• 卷：184
• 期：1-3
• 页码：207-211
• 数据来源：sp

摘要

Our investigations on substitutional and interstitial Fe in the group IV semiconductors, from 57Fe M枚ssbauer measurements following 57Mn implantation, have been continued with investigations in 3C-SiC. M枚ssbauer spectra were collected after implantation and measurement at temperatures from 300 to 905 K. Following comparison with M枚ssbauer parameters for Fe in Si, diamond and Ge, four Fe species are identified: two due to Fe in tetrahedral interstitial sites surrounded, respectively, by four C atoms (Fe_i.C) or four Si atoms (Fe_i,Si) and two to Fe in (or close to) defect free or implantation damaged substitutional sites. An annealing stage at 300–500 K is evident. Above 600 K the Fe_i,Si fraction decreases markedly, reaching close to zero intensity at 905 K. This is accompanied by a corresponding increase in the Fe_i,C fraction.