Investigation on the effect of abrasive on the 6H-SiC of lapping
- 作者：Li WeiYan QiushengLu JiabinPan Jisheng
- 会议时间：2012-10-19
- 关键词：6H-SiC ; abrasive ; lapping
- 作者单位：Mechanical manufacturing and automation, Guangdong University of Technology, Guangzhou,Guangdong, 510006,China
- 母体文献：2012年中国(国际)光整加工技术及表面工程学术会议论文集
- 会议名称：2012年中国(国际)光整加工技术及表面工程学术会议
- 会议地点：无锡
- 主办单位：中国机械工程学会
- 语种：chi
摘要
In order to remove the cutting marks on the surface of the 6H-SiC cutting wafer, to investigate the mechanism ofthe abrasive grains in the lapping and optimize the component. Experiments were taken to investige the effect of abrasive(types, grain size, concentration, mixed abrasive) on the lapping surface properties of 6H-SiC. Research shows that the largegrain size、the high hardness abrasive result in higher material removal rate , while the small grain size、the low hardnessabrasive lead to lower surface roughness Ra value. When the abrasive concentration is of 7.69 weight percentage(wt%),good processing effect was obtained. Lower surface roughness Ra value can be obtained with certain proportion mixedabrasive while ensuring that the material removal rate. Selecting the appropriate abrasive results to the high-quality surfaceas well as the polishing can be efficiently.