Calculation of phase diagrams of epitaxial in AlxIn1-xAs/InP,AsxSb1-xAl/InP and AlxIn1-xSb/Insb films
- 作者：Y.LuC.P.WangX.J.Liu
- 会议时间：2008-11-01
- 关键词：计算相图 ; 半导体薄膜 ; 闪锌矿
- 作者单位：Department of Materials Science and Engineering,College of Materials,and Research Center of Materials Design and Applications,Xiamen University,Xiamen,P.R.China,361005
- 母体文献：第十四届全国相图会议暨国际相图与材料设计研讨会论文集
- 会议名称：第十四届全国相图会议暨国际相图与材料设计研讨会
- 会议地点：长沙
- 主办单位：中国物理学会
- 语种：chi
摘要
The models of phase diagram calculation of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy,self energy of misfit dislocations and surface energy to Gibbs free energy.Phase diagrams of epitaxial in AlxIn1-xAs/InP,AsxSb1-xAl/InP and AlxIn1-xSb/InSb films at various thicknesses were calculated.The calculated results indicate that the region of zinc-blende type phase and compositional latching areas are extended as thickness of the layer decreases,and the effect of the liquid and solid surface energy on the phase diagram appears little.