Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
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摘要
InP-based high electron mobility transistors(HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30?, which can be accounted for the most severe carrier sheet density reduction under this condition.
InP-based high electron mobility transistors(HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30?, which can be accounted for the most severe carrier sheet density reduction under this condition.
InP-based high electron mobility transistors(HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30?, which can be accounted for the most severe carrier sheet density reduction under this condition.
引文
[1]Deal W R 2014 The 39th International Conference on Infrared,Millimeter,and Terahertz Waves(IRMMW-THz),Septemmber 14–19,2014,Tucson,AZ,USA,pp.14–19
[2]Chen J,Puzyrev Y S,Zhang C X,Zhang E X,Mc Curdy M W,Fleetwood D M,Schrimpf R D,Pantelides S T,Kaun S W,Kyle E C H and Speck J S 2013 IEEE Trans.Nucl.Sci.60 4080
[3]Zhong Y H,Zhang Y M,Zhang Y M,Wang X T,Lv H L,Liu X Y and Jin Z 2013 Chin.Phys.B 22 128503
[4]Zhong Y H,Yang Y,Li X J,Ding P ang Jin Z 2015 J.Korean Phys.Soc.66 1020
[5]Leong K M K H,Mei X B,Yoshida W,Liu P H,Zhou Z Y,Lange M,Lee L S,Padilla J P,Zamora A,Gorospe B S,Nguyen K and Deal W R 2015 IEEE Microwave and Wireless Components Letters 25 397
[6]Zhou S X,Qi M,Ai L K and Xu A H 2016 Chin.Phys.B 25 096801
[7]Ajayan J and Nirmal D 2015 Superlattices and Microstructures 86 1
[8]Lv L,Ma J G,Cao Y R,Zhang J C,Zhang W,Li L,Xu S R,Ma X H,Ren X T and Hao Y 2011 Microelectronics Reliability 51 2168
[9]Lv L,Zhang J C,Li L,Ma X H,Cao Y R and Hao Y 2012 Acta Phys.Sin.61 057202(in Chinese)
[10]Gu W P,Zhang L,Li Q H,Qiu Y Z,Hao Y,Quan S and Liu P Z 2014Acta Phys.Sin.63 047202(in Chinese)
[11]Carniti P,Cassina L,Gotti C,Maino C and Pessina G 2016 Nucl.Instrum.Methods Phys.Res.A 824 258
[12]Kurachi I,Kobayashi K,Okihara M,Kasai H,Hatsui T,Hara K,Miyoshi T and Arai Y 2015 IEEE Trans.Electron Dev.62 2371
[13]Tunhuma S M,Auret F D,Legodi M J and Diale M 2016 J.Appl.Phys.119 145705
[14]Anderson T J,Koehler A D,Greenlee J D,Weaver B D,Mastro A M,Hite J K,Eddy C R,Kub F J and Hobart K D 2014 IEEE Electron Dev.Lett.35 826
[15]Zhong Y H,Wang X T,Su Y B,Cao Y X,Jin Z,Zhang Y M and Liu X Y 2012 J.Semicond.33 43
[16]Xue J X,Zhang G J,Guo L P,Zhang H B,Wang X G,Zou J,Peng S M and Long X H 2014 J.European Ceram.Soc.34 633
[17]Liu M,Zhang Y M,Lu H L,Zhang Y M,Zhang J C and Ren X T 2015Solid-State Electron.109 52
[18]Patrick E E,Choudhury M,Ren F,Pearton S J and Law M E 2015 ECS J.Solid State Sci.Technol.4 Q21
[19]Movlaa H,Babazadeha M and Sadreddini S V 2016 Optik 127 3844
[20]Yannakopoulos P H,Skountzos A P and Veselyb M 2008 Microelectronics Journal 39 732
[2]Chen J,Puzyrev Y S,Zhang C X,Zhang E X,Mc Curdy M W,Fleetwood D M,Schrimpf R D,Pantelides S T,Kaun S W,Kyle E C H and Speck J S 2013 IEEE Trans.Nucl.Sci.60 4080
[3]Zhong Y H,Zhang Y M,Zhang Y M,Wang X T,Lv H L,Liu X Y and Jin Z 2013 Chin.Phys.B 22 128503
[4]Zhong Y H,Yang Y,Li X J,Ding P ang Jin Z 2015 J.Korean Phys.Soc.66 1020
[5]Leong K M K H,Mei X B,Yoshida W,Liu P H,Zhou Z Y,Lange M,Lee L S,Padilla J P,Zamora A,Gorospe B S,Nguyen K and Deal W R 2015 IEEE Microwave and Wireless Components Letters 25 397
[6]Zhou S X,Qi M,Ai L K and Xu A H 2016 Chin.Phys.B 25 096801
[7]Ajayan J and Nirmal D 2015 Superlattices and Microstructures 86 1
[8]Lv L,Ma J G,Cao Y R,Zhang J C,Zhang W,Li L,Xu S R,Ma X H,Ren X T and Hao Y 2011 Microelectronics Reliability 51 2168
[9]Lv L,Zhang J C,Li L,Ma X H,Cao Y R and Hao Y 2012 Acta Phys.Sin.61 057202(in Chinese)
[10]Gu W P,Zhang L,Li Q H,Qiu Y Z,Hao Y,Quan S and Liu P Z 2014Acta Phys.Sin.63 047202(in Chinese)
[11]Carniti P,Cassina L,Gotti C,Maino C and Pessina G 2016 Nucl.Instrum.Methods Phys.Res.A 824 258
[12]Kurachi I,Kobayashi K,Okihara M,Kasai H,Hatsui T,Hara K,Miyoshi T and Arai Y 2015 IEEE Trans.Electron Dev.62 2371
[13]Tunhuma S M,Auret F D,Legodi M J and Diale M 2016 J.Appl.Phys.119 145705
[14]Anderson T J,Koehler A D,Greenlee J D,Weaver B D,Mastro A M,Hite J K,Eddy C R,Kub F J and Hobart K D 2014 IEEE Electron Dev.Lett.35 826
[15]Zhong Y H,Wang X T,Su Y B,Cao Y X,Jin Z,Zhang Y M and Liu X Y 2012 J.Semicond.33 43
[16]Xue J X,Zhang G J,Guo L P,Zhang H B,Wang X G,Zou J,Peng S M and Long X H 2014 J.European Ceram.Soc.34 633
[17]Liu M,Zhang Y M,Lu H L,Zhang Y M,Zhang J C and Ren X T 2015Solid-State Electron.109 52
[18]Patrick E E,Choudhury M,Ren F,Pearton S J and Law M E 2015 ECS J.Solid State Sci.Technol.4 Q21
[19]Movlaa H,Babazadeha M and Sadreddini S V 2016 Optik 127 3844
[20]Yannakopoulos P H,Skountzos A P and Veselyb M 2008 Microelectronics Journal 39 732