W波段InP DHBT宽带高功率压控振荡器（英文）
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摘要
成功实现了一款具有高输出功率和宽频率调谐范围的基波压控振荡器.其制作工艺为0. 8μm InP DH-BT工艺,晶体管的最大fT和fmax分别为170和250 GHz.电路核心部分采用了为高频应用改进的平衡式考毕兹拓扑,在后面添加一级缓冲放大器来抑制负载牵引效应,并提升了输出功率. DHBT的反偏CB结作为变容二极管来实现频率调谐.芯片测试结果表明,压控振荡器的频率调谐范围为81～97. 3 GHz,相对带宽为18. 3%.在调谐频率范围内最大输出功率为10. 2 dBm,输出功率起伏在3. 5 dB以内.在该压控振荡器的最大调谐频率97. 3 GHz处相位噪声为-88 dBc/Hz@1MHz.
A fundamental W-band voltage-controlled oscillator( VCO) featuring high output power and wide tuning range has been successfully designed. The VCO was fabricated utilizing 0. 8 μm InP DHBT technology. The DHBT exhibits peak fTof 170 GHz and fmaxof 250 GHz. The VCO core implemented a balanced Colpitts-type topology modified for high-frequency application. An additional buffer amplifier stage was connected with the core to further boost output power as well as eliminate the load pulling effect. The DHBT base-collector P-N junction at reverse bias was chosen as a varactor diode to realize a wide frequency tuning. The measured results demonstrate that the oscillation frequency of the proposed VCO can be tuned between 81 ～ 97. 3 GHz,which is a relative tuning bandwidth of 18. 3 %. Over this frequency range the oscillator has a maximum output power of 10. 2 dBm,and the power variation is less than 3. 5 dB. A phase noise of-88 dBc/Hz@ 1 MHz is obtained at the highest tuning frequency.
A fundamental W-band voltage-controlled oscillator( VCO) featuring high output power and wide tuning range has been successfully designed. The VCO was fabricated utilizing 0. 8 μm InP DHBT technology. The DHBT exhibits peak fTof 170 GHz and fmaxof 250 GHz. The VCO core implemented a balanced Colpitts-type topology modified for high-frequency application. An additional buffer amplifier stage was connected with the core to further boost output power as well as eliminate the load pulling effect. The DHBT base-collector P-N junction at reverse bias was chosen as a varactor diode to realize a wide frequency tuning. The measured results demonstrate that the oscillation frequency of the proposed VCO can be tuned between 81 ～ 97. 3 GHz,which is a relative tuning bandwidth of 18. 3 %. Over this frequency range the oscillator has a maximum output power of 10. 2 dBm,and the power variation is less than 3. 5 dB. A phase noise of-88 dBc/Hz@ 1 MHz is obtained at the highest tuning frequency.
引文
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[2]Khanna A. P. S. State of the art in microwave VCOs[J]. Microwave Journal,2015,46(10),2203-2214.
[3]Rumen Kozhuharov,Mingquan Bao,Marcus Gavell,et al. A W-and G-band MMIC source using In P HBT technology[C]. IEEE MTT-S International Microwave Symposium Digest,Canada,QC,2012:1-3.
[4]Shinwon Kang,Jun-Chau Chien,Ali M. Niknejad. A W-Band lownoise PLL with a fundamental VCO in SiGe for millimeter-wave applications[J]. IEEE Transaction on Microwave Theory and Techniques,2014,62(10),2390-2404.
[5]Rainer Weber,Dirk Schwantuschke,Peter Bruckner,et al. A 92 GHz Ga N HEMT voltage-controlled oscillator MMIC[C]. IEEE MTT-S International Microwave Symposium,USA,FL,2014:1-4.
[6]Chieh-Ying Yang,Sih-Ying Li,Sunny Cuei-Ling Hsieh,et al. A push-push voltage-controlled oscillator for W-band applications in 90-nm CMOS[C]. IEEE International Symposium on Radio-Frequency Integration Technology(RFIT),Taiwan,Taipei,2016:1-3.
[7]Y. Chao,H. C. Luong,Z. Hong. Analysis and Design of a 14. 1-m W 50/100-GHz Transformer-Based PLL With Embedded Phase Shifter in 65-nm CMOS[J]. IEEE Transactions on Microwave Theory and Techniques,2015,63(4),1193-1201.
[8]Jongwon Yun,Namhyung Kim,Daekeun Yoon,et al. A 248-262 GHz In P HBT VCO with interesting tuning behavior[J]. IEEE Microwave and Wireless Components Letters,2014,24(8),560-562.
[9]Zhong Ying-Hui,Su Yong-Bo,Jin Zhi,et al. An InGaAs/In P Wband dynamic frequency divider[J]. J. Infrared Millim. Waves,(钟英辉,苏永波,金智,等. W波段InGaAs/InP动态二分频器.红外与毫米波学报)2012,31(5),393-398.
[10]Adar A,Ramachandran R. An HBT MMIC wideband VCO[C].IEEE Microwave and Millimeter-wave Circuits Symposium,USA,MA,1991:73-76.
[11]Makon R E,Driad R,Schneider K,et al. Fundamental W-Band In P DHBT-Based VCOs with low phase noise and wide tuning range[C].IEEE MTT-S International Microwave Symposium,USA,HI,2007:649-652.
[12]Stuenkel M,Feng M. An In P VCO with static frequency divider for millimeter wave clock generation,IEEE Compound Semiconductor Integrated Circuit Symposium(CSICS),USA,CA,2010:1-4.
[13]Thomas Jensen,Thualfiqar Al-sawaf,Marco Lisker. Millimeter-wave hetero-integrated sources in In P-on-BiCMOS technology[J]. International Journal of Microwave and Wireless Technologies,2014,6(3/4),225-233.