三氧化二铁六角晶体的制备及其气敏性应用
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摘要
通过化学气相沉积法(CVD)制备了三氧化二铁(α-Fe_2O_3)六角晶体,后对制得的α-Fe_2O_3进行了系列表征,对反应机理进行了分析。同时构建了场效应晶体管(FET)考察了材料电学性能,并测试了器件对一氧化碳(CO)的气敏性能。实验表明:以三氯化铁(FeCl_3)和水蒸汽(H2O)为原料通过CVD方法能够在相对温和的条件下制备准二维α-Fe2O3六角晶体;用制得的材料构建场效应晶体管具有良好的电学性能,并对CO气体具有很好的响应。
Hexagonal crystalline of ferric oxide are prepared by chemical vapor deposition.Then we conducted a series of characterization ofα-Fe_2O_3 crystal,and briefly discussed the reaction mechanism.The field effect transistor was constructed to investigate the electrical properties of the materials and the gas sensing of carbon monoxide were tested.The experimental results show that ferric oxide can be prepared under relatively mild conditions with ferric chloride and water vapor as raw materials.The field effect transistor constructed with the prepared materials have a good response to carbon monoxide.
Hexagonal crystalline of ferric oxide are prepared by chemical vapor deposition.Then we conducted a series of characterization ofα-Fe_2O_3 crystal,and briefly discussed the reaction mechanism.The field effect transistor was constructed to investigate the electrical properties of the materials and the gas sensing of carbon monoxide were tested.The experimental results show that ferric oxide can be prepared under relatively mild conditions with ferric chloride and water vapor as raw materials.The field effect transistor constructed with the prepared materials have a good response to carbon monoxide.
引文
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[3]KUBO R.Electronic properties of metallic fine particles[J].Journal of the Physical Society of Japan,2000,25(8):1171-1210.
[4]TSUZUKI T,PAUL G.ZnO nano particles synthesized by chemical vapor deposition[J].Scripta Materialia,2009,22(4):326-331.
[5]WEI P H,CHEN S H.Enhancement of trimethylamine sensitivity of MOCVD-ZnO thin film gas sensor by thorium[J].Sensors and Actuators B-Chemical,2000,62(1):117-121.
[6]KIM J,HAN C,KHAN M,et al.Nanomaterial-embedded gas sensor fabrication[J].Current Applied Physics,2015,9(2):38-42.
[7]WU J H,CHENG Y H,HUANG Y F,et al.Fabrication and photocatalytic properties of HLaNb2O7(Pt,Fe2O3)pillared nanomaterial[J].Journal of Physical Chemistry C,2007,111(9):3624-3628.
[8]FAN Z Y,WANG D W,CHANG P C,et al.ZnO nanowire field-effect transistor and oxygen sensing property[J].Applied Physics Letter,2004,85:5923-5924.
[9]LI Q H,LIANG Y X,WAN Q,et al.Oxygen sensing characteristics of individual ZnO nanowire transistors[J].Applied Physics Letter,2004,85:6389-6390.
[10]FAN H,ZHANG R,GONG C,et al.The micro-nano structure and conductivity of PANI films growing in-situ on glass matrix[J].Plastics,2008,37(1):62-66.
[11]MARTIN L,FJELLVAG H.Growth of Fe2O3thin films by atomic layer deposition[J].Thin Solid Films,2005,488:74-81.
[12]SHAIKHUTDINOV S K,JOSEPH Y,KUHRS C,et al.Structure and reactivity of iron oxide surfaces[J].Faraday Discuss,1999,114:363-380.
[13]ZHAO Y M,LI Y H,MA R,et al.Growth and characterization of iron oxide nanorods/anobelts prepared by a simple ironwater reaction[J].Small,2006,2(3):422-427.
[14]BENJAMIN M K,ALEX B F M.Photoelectrochemical investigation of ultrathin film iron oxide solar cells prepared by atomic layer deposition[J].Langmuir,2011,27(1):461-468.