硅薄膜太阳电池的电致发光与I-V特性研究
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摘要
研究了薄膜太阳电池电致发光特性,并运用AAA极太阳模拟器测试其I-V特性。采用高灵敏度光谱仪检测薄膜电池电致发光的光谱波长在860～1 200 nm之间,讨论其对应禁带宽度为1.12 eV;运用制冷的CCD相机探测电致发光的EL图像,分析不同的薄膜电池在相同偏压80 V下电致发光强度与其电性能的内在关系;研究不同偏压35 V\55 V\80 V下,电压、电流与薄膜电池的EL发光强度正相关性;结果分析表明串联电阻太高对电压具有分压作用导致发光光谱强度减弱,并联电阻太低具有分流作用电致发光强度减弱,通过电致发光检测和电性能测试相结合可为硅薄膜电池的工艺改进提供快速、准确的判断依据。
The luminescence characteristic of the silicon thin film solar cells is studied using the electroluminescence principle,and the corresponding electrical performance is deeply analyzed in the paper.The inherent correlation properties between the electrical performance and the luminescence characteristics are deeply studied.Firstly,The spectrum wavelength of the thin film solar cell infrared band detected by the high sensitivity spectrograph is about 860 nm to 1 200 nm and the thin film solar cell′s energy gap which is about 1.12 eV is analyzed.Secondly,the EL image were detected by the cryogenic CCD camera,and under the same bias voltage 80 V the internal relation between the electrical performance tested by the AAA Calss solar spectrum and the luminescence intensity is deeply analyzed.Under different bias voltage 35 V\5 V\80 V,the positive correlativity of different bias voltage and the solar cell EL intensity,the positive correlativity of different current and the solar cell EL intensity is respectively researched.The research indicates that the high series resistance and the low shunt resistance lead to weaken luminescent spectrum intensity for the electricity of partial pressure and shunting effect.It will provide rapid and accurate criterion to improve thin film solar cell process by combining the electroluminescence measurement and electric performance test.
The luminescence characteristic of the silicon thin film solar cells is studied using the electroluminescence principle,and the corresponding electrical performance is deeply analyzed in the paper.The inherent correlation properties between the electrical performance and the luminescence characteristics are deeply studied.Firstly,The spectrum wavelength of the thin film solar cell infrared band detected by the high sensitivity spectrograph is about 860 nm to 1 200 nm and the thin film solar cell′s energy gap which is about 1.12 eV is analyzed.Secondly,the EL image were detected by the cryogenic CCD camera,and under the same bias voltage 80 V the internal relation between the electrical performance tested by the AAA Calss solar spectrum and the luminescence intensity is deeply analyzed.Under different bias voltage 35 V\5 V\80 V,the positive correlativity of different bias voltage and the solar cell EL intensity,the positive correlativity of different current and the solar cell EL intensity is respectively researched.The research indicates that the high series resistance and the low shunt resistance lead to weaken luminescent spectrum intensity for the electricity of partial pressure and shunting effect.It will provide rapid and accurate criterion to improve thin film solar cell process by combining the electroluminescence measurement and electric performance test.
引文
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[2] Buffiere M,Brammertz G,Oueslati S,et al.Poortmans,spectral current-voltage analysis of kesterite solar cells[J].J.Phys.D:Appl.Phys.,2014,47:175101-175106.
[3] Siebentritt S.Why are kesterite solar cells not 20% efficient-review[J].Thin Solid Films,2013,535:1-4.
[4] FU Xiu-hua,YANG Jin-ye,LIU Dong-mei,et al.Research on ladder-type compensation filter based on solarsimulator[J].Acta Photonica Sinica,2017,46(11):1123001-1-5.付秀华,杨金也,刘冬梅,等.刘冬梅基于太阳模拟器阶梯式补偿滤光片的研究[J].光子学报,2017,46(11):1123001-1-5.
[5] CHENG Xiao-juan,PENG Ye-qing,He Liang,et al.Study on the electrical properties of low-lifetime area ofingot polysilicon ingot edge[J].Chinese Symposium on solar grade silicon and photovoltaic power generation,2013.程小娟,彭也庆,何亮,等.铸锭多晶硅锭边部低少子寿命区的电性能研究[J].中国太阳级硅及光伏发电研讨会,2013.
[6] Edwards M B,Bocking.Application of photoluminescence to screen printed silicon solar cellfabrication[A].22-nd Euro-pean Photovoltaic Solar Energy Conference[C].2007,1006-1010.
[7] Khoshsirat N,Md Yunus N A.Numerical simulation of CIGS thin film solar cells using SCAPS-1D[J].In:IEEE Conference on Sustainable Utilization and Development in Engineering and Technology,2013.
[8] WANG Chao,JIANG Xiao-yu,LIU Xiao-hui.Defect detection in crystalline silicon solar cells based onelectrolu-minescence imaging[J].Journal of Optoelectronics·Laser,2011,22(9):1332-1336.王超,蒋晓瑜,柳效辉.基于电致发光成像理论的硅太阳电池缺陷检测[J].光电子·激光,2011,22(9):1332-1336.
[9] CHEN Wen-zhi,ZHANG Feng-yan,ZHANG Ran,et al.Defect detection of solar cells based on electroluminescence imaging[J].Chin.J.Lumin.,2013,34(8):1028-1033.陈文志,张风燕,张然,等.基于电致发光成像的太阳能电池缺陷检测[J].发光学报,2013,34(8):1028-1033.
[10] YANG Hui-Shan.Optical and electronic performance of highly bright yellow-emitting OLED with sub-monolayer[J].Acta Photonica Sinica,2010,39(10):1734-1737.杨惠山.亚单层黄色有机发光器件制备与光电性能研究[J].光子学报,2010,39(10):1734-1737.
[11] Vam der Jeode A S H,Bultman J H,Hoomstra J.et al.Optimizing thefront side metallization process using the corescan[A].29th IEEE Photovoltaic Specialists Conference[C].New Orleans,USA:2002,340-343.
[12] Nefzi,Chayma.Souli,Mehdi.Cuminal,Yvan,et al.Effect of sulfur concentration on structural,optical and electrical properties of Cu2FeSnS4 thin films forsolar cells and photocatalysis applications[J].Superlattices and Microstructures,2018,124:17-29.
[13] Wrfel P,Trupke T,Puzzer T,et al.Diffusion lengths of silicon solar cells from luminescence images[J].J.Appl.Phys.,2007,101(12):123110-1-10.
[14] LU Wei-ming,LI Xing,ZHANG Fu-te,et al.Defect detection of solar cell based on electroluminescence and thermography Imaging with different bias voltage[J].Chin.J.Lumin.,2014,35(12):1512-1519.鲁伟明,李省,张付特,等.基于不同电压下的电致发光和红外成像的太阳能电池缺缺陷测试[J].发光学报,2014,35(12):1512-1519.
[15] Schneemann M,Kirchartz T,Carius R,et al.Measurement and modeling of reverse biasedelectroluminescence in multi-crystalline silicon solar cells[J].J.Appl.Phys.,2013,114(13):134509-1-6.
[16] QIAO Nao-sheng,YE Yu-tang,HUANG Yong-lin,et al.Study on the method of defect circle hole detection in PCB microscopeimage[J].Journal of Optoelectronics·Laser,2009,20(7):964-966.乔闹生,叶玉堂,黄永林,等.PCB显微图像缺陷圆孔检测方法研究[J].光电子·激光,2009,20(7):964-966.
[17] Uyuki T,Kondo H,Kaji Y,et al.Analytic findings in theelectroluminescence characterization of crystallinesilicon solar cells[J].J.Appl.Phys.,2007,101(2):023711-1—023711-5.
[18] Biswas S.Basher M K.Hossain M.Khalid,et al.Study and analysis of the morphological,elemental and electrical properties of phosphorus doped monocrystalline silicon solar cell[J].Materials Research Express,2019,5(6):201-209.
[19] Lee,Kisu Kim,Jungwon Yu,Haejun,et al.A highly stable and efficient carbon electrode-based perovskite solar cell achieved via interfacial growth of 2D PEA(2)PbI(4) perovskite[J].Journal of Materials Chemistry,2018,6(47):24560-24568.
[20] Choi,Eun Young Kim,Jincheol Lim Sean,et al.Enhancing stability for organic-inorganic perovskite solar cells by atomic layer deposited Al2O3 encapsulation[J].Solar Energy Materials And Solar Cells,2018,188:37-45.
[21] Herckens,Roald Van Gompel,Wouter T M Song,Wenya,et al.Multi-layered hybrid perovskites templated with carbazole derivatives:optical properties,enhanced moisture stability and solar cell characteristics[J].Journal of Materials Chemistry,2018,6(45):22899-22908.