适用于器件并联型ANPC拓扑的低感叠层母排设计方法
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摘要
在高压大容量电力电子设备中,采用叠层母排作为主要连接器件能够降低换流回路杂散电感,减小开关瞬态过程中的电压尖峰,因此叠层母排的设计对高压大容量电力电子装置的性能有着显著影响。为此,针对器件并联型有源中点钳位型(ANPC)拓扑,从换流回路杂散电感大小和不同换流回路杂散电感对称性的角度出发,对比了不同母排层数和空间结构对换流回路杂散电感的影响,给出了一种功率器件对称分布的四层母排设计方法。通过换流回路杂散电感双脉冲实验提取结果,验证了所提出母排结构各换流回路杂散电感理论分析的正确性和仿真计算的准确性。该设计方法能够有效降低器件并联型ANPC拓扑叠层母排换流回路的杂散电感,并使各换流回路杂散电感具有对称性,降低了功率器件的电气应力,提高了各功率器件电气应力的均衡性,有效提高变换器运行的可靠性。
In high-voltage and large-capacity power electronic equipment, using laminated busbar as the main connecting device can reduce the stray inductance of the commutating loops and reduce the voltage spike during the switching transient. Therefore, the design of laminated busbar plays an important role in improving the performance of high-voltage and large-capacity power electronic equipment. Based on the topology of device-parallel active neutral-point-clamped(ANPC)circuit, according to the quantity and the symmetry of the stray inductance of different commutating loops, the effect of different busbar layers and spatial structures on the stray inductance of the commutating loops is compared, and then a four-layer busbar design method with symmetric distribution of power device is proposed. According to double-pulse experiment result for extracting stray inductance, the validity of the stray inductance analysis and accuracy of simulation calculation of each commutating loops of the proposed busbar structure is verified. The design method can be used to effectively reduce the stray inductance of the laminated busbar of device-parallel ANPC circuit and make the stray inductance of each commutating loops symmetrical, which reduces the electrical stress and improves the balance of electrical stress between power devices and improves the reliability of the converter operation effectively.
In high-voltage and large-capacity power electronic equipment, using laminated busbar as the main connecting device can reduce the stray inductance of the commutating loops and reduce the voltage spike during the switching transient. Therefore, the design of laminated busbar plays an important role in improving the performance of high-voltage and large-capacity power electronic equipment. Based on the topology of device-parallel active neutral-point-clamped(ANPC)circuit, according to the quantity and the symmetry of the stray inductance of different commutating loops, the effect of different busbar layers and spatial structures on the stray inductance of the commutating loops is compared, and then a four-layer busbar design method with symmetric distribution of power device is proposed. According to double-pulse experiment result for extracting stray inductance, the validity of the stray inductance analysis and accuracy of simulation calculation of each commutating loops of the proposed busbar structure is verified. The design method can be used to effectively reduce the stray inductance of the laminated busbar of device-parallel ANPC circuit and make the stray inductance of each commutating loops symmetrical, which reduces the electrical stress and improves the balance of electrical stress between power devices and improves the reliability of the converter operation effectively.
引文
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[15]DENG X,HUO Y,WANG Q,et al.Development of a compact 60 kWthree-phase asymmetry half-bridge power convertor with specifically designed busbar for switched reluctance machines[C]∥2015 IEEENW Russia Young Researchers in Electrical and Electronic Engineering Conference(EIConRusNW).Saint Petersburg,Russia:IEEE,2015:311-316.
[16]WITCHER J B.Methodology for switching characterization of power devices and modules[D].Blacksburg,USA:Virginia Polytechnic Institute and State University,2003.
[17]冯高辉,袁立强,赵争鸣,等.基于开关瞬态过程分析的母排杂散电感提取方法研究[J].中国电机工程学报,2014,34(36):6442-6449.FENG Gaohui,YUAN Liqiang,ZHAO Zhengming,et al.A novel inductance extraction method for busbars based on turn-on/off transient process[J].Proceedings of the CSEE,2014,34(36):6442-6449.
[18]金祝锋,李威辰,胡斯登,等.大容量电力电子装置中母排杂散电感提取方法的优化研究[J].电工技术学报,2017,32(14):1-7.JIN Zhufeng,LI Weichen,HU Sideng,et al.Optimized stray inductance extraction method of busbar in large-capacity power electronic equipment[J].Transactions of China Electrotechnical Society,2017,32(14):1-7.
[2]吴郁,刘晨静,金锐,等.逆导型IGBT技术发展综述[J].高电压技术,2018,44(10):3221-3230.WU Yu,LIU Chenjing,JIN Rui,et al.Review of reverse conducting IGBT technology development[J].High Voltage Engineering,2018,44(10):3221-3230.
[3]谢宗奎,赵志斌,柯俊吉,等.SiC MOSFET器件封装和测试平台的杂散电感提取[J].高电压技术,2019,45(2):586-592.XIE Zongkui,ZHAO Zhibin,KE Junji,et al.Stray inductance extraction of SiC MOSFET device package and test platform[J].High Voltage Engineering,2019,45(2):586-592.
[4]琚兴宝,彭振东,肖友国,等.固态限流器中大功率IGCT并联关断保护电路[J].高电压技术,2018,44(2):395-402.JU Xingbao,PENG Zhendong,XIAO Youguo,et al.Protection circuit for large power parallel connected IGCTs turning off in a solid state fault current limiter[J].High Voltage Engineering,2018,44(2):395-402.
[5]张明锐,金鑫,刘金辉,等.基于IGBT的固态断路器开断策略研究[J].电力系统保护与控制,2012,40(18):123-126,131.ZHANG Mingrui,JIN Xin,LIU Jinhui,et al.Study on breaking strategy of solid-state circuit breaker based on IGBT[J].Power System Protection and Control,2012,40(18):123-126,131.
[6]DOMURAT-LINDE A,HOENE E.Analysis and reduction of radiated EMI of power modules[C]∥2012 7th International Conference on Integrated Power Electronics Systems(CIPS).Nuremberg,Germany:IEEE,2012:1-6.
[7]汪鋆,杨兵建,徐枝新,等.750 kVA高功率密度二极管钳位型三电平通用变流模块的低感叠层母线排设计[J].中国电机工程学报,2010,30(18):47-54.WANG Jun,YANG Bingjian,XU Zhixin,et al.Configuration of low inductive laminated bus bar in 750 k VA NPC three-level universal converter module of high power density[J].Proceedings of the CSEE,2010,30(18):47-54.
[8]ZARE F,LEDWICH G F.Reduced layer planar busbar for voltage source inverters[J].IEEE Transactions on Power Electronics,2002,17(4):508-516.
[9]陈静.三电平变换器无感母排设计[J].电气自动化,2013,35(5):64-66.CHEN Jing.Design of low-inductance laminated busbar based on Ansys[J].Electrical Automation,2013,35(5):64-66.
[10]WANG J,YANG B,ZHAO J,et al.Development of a compact 750kVA three-phase NPC three-level universal inverter module with specifically designed busbar[C]∥2010 Twenty-fifth Annual IEEEApplied Power Electronics Conference and Exposition(APEC).Palm Springs,USA:IEEE,2010:1266-1271.
[11]YU H,ZHAO Z,LU T,et al.Laminated busbar design and stray parameter analysis of three-level converter based on HVIGBT series connection[C]∥2015 IEEE Applied Power Electronics Conference and Exposition(APEC).Charlotte,USA:IEEE,2015:3201-3207.
[12]WANG J N,YU S L,ZHANG X.Effect of key physical structures on the laminated bus bar inductance[C]∥2016 IEEE 8th International Power Electronics and Motion Control Conference(IPEMC-ECCEAsia).Hefei,China:IEEE,2016:3689-3694.
[13]秦昌伟,王群京,陈权,等.基于数值法的有源箝位三电平逆变器损耗分析[J].电力电子技术,2014,48(10):13-15,25.QIN Changwei,WANG Qunjing,CHEN Quan,et al.Analysis of losses in three-level active clamped inverter based on numerical method[J].Power Electronics,2014,48(10):13-15,25.
[14]朱晓莹.ANPC三电平逆变器控制策略与故障诊断研究[D].徐州:中国矿业大学,2018.ZHU Xiaoying.Research on control strategy and fault diagnosis of active neutral point clamped three-level inverter[D].Xuzhou,China:China University of Mining and Technology,2018.
[15]DENG X,HUO Y,WANG Q,et al.Development of a compact 60 kWthree-phase asymmetry half-bridge power convertor with specifically designed busbar for switched reluctance machines[C]∥2015 IEEENW Russia Young Researchers in Electrical and Electronic Engineering Conference(EIConRusNW).Saint Petersburg,Russia:IEEE,2015:311-316.
[16]WITCHER J B.Methodology for switching characterization of power devices and modules[D].Blacksburg,USA:Virginia Polytechnic Institute and State University,2003.
[17]冯高辉,袁立强,赵争鸣,等.基于开关瞬态过程分析的母排杂散电感提取方法研究[J].中国电机工程学报,2014,34(36):6442-6449.FENG Gaohui,YUAN Liqiang,ZHAO Zhengming,et al.A novel inductance extraction method for busbars based on turn-on/off transient process[J].Proceedings of the CSEE,2014,34(36):6442-6449.
[18]金祝锋,李威辰,胡斯登,等.大容量电力电子装置中母排杂散电感提取方法的优化研究[J].电工技术学报,2017,32(14):1-7.JIN Zhufeng,LI Weichen,HU Sideng,et al.Optimized stray inductance extraction method of busbar in large-capacity power electronic equipment[J].Transactions of China Electrotechnical Society,2017,32(14):1-7.