喷墨打印金属氧化物异质结晶体管
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摘要
通过用喷墨打印制备的ZnO/IGZO异质结代替单层半导体沟道克服了氧化物缺陷导致的电子传输限制。ZnO/IGZO异质结晶体管表现出带状电子传输,迁移率比单层IGZO或ZnO TFT分别增大了约9倍和19倍,达到6.42 cm~2/(V·s)。开关比分别增大了2个和4个数量级,达到1.8×10~8。性能的显著改善源自于IGZO和ZnO异质界面间由于导带的大偏移量而形成的二维电子气。
In this work, the electron transport limitations caused by oxide defects was overcome by replacing single layer semiconductor channel with a ZnO/IGZO heterojunction prepared by inkjet printing. It was found that ZnO/IGZO transistor exhibited banded electron transport, and the mobility was increased by about 9 times and 19 times, respectively, to 6.42 cm~2/(V·s) compared with single layer IGZO or ZnO TFT. The switch ratio was increased by 2 and 4 orders of magnitude respectively, which can reach 1.8×10~8. Significant improvement in performance was associated with the two-dimensional electron gas formed between the IGZO and ZnO heterointerfaces due to the large offset of the conduction band.
In this work, the electron transport limitations caused by oxide defects was overcome by replacing single layer semiconductor channel with a ZnO/IGZO heterojunction prepared by inkjet printing. It was found that ZnO/IGZO transistor exhibited banded electron transport, and the mobility was increased by about 9 times and 19 times, respectively, to 6.42 cm~2/(V·s) compared with single layer IGZO or ZnO TFT. The switch ratio was increased by 2 and 4 orders of magnitude respectively, which can reach 1.8×10~8. Significant improvement in performance was associated with the two-dimensional electron gas formed between the IGZO and ZnO heterointerfaces due to the large offset of the conduction band.
引文
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[2] LIU J,BUCHHOLZ D B,CHANG R P H,et al..High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel [J].Adv.Mater.,2010,22(21):2333-2337.
[3] PETTI L,MUNZENRIEDER N,VOGT C,et al..Metal oxide semiconductor thin-film transistors for flexible electronics [J].Appl.Phys.Rev.,2016,3(2):021303-1-10.
[4] NOMURA K,OHTA H,TAKAGI A,et al..Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].Nature,2004,432(7016):488-492.
[5] FORTUNATO E,BARQUINHA P,MARTINS R.Oxide semiconductor thin-film transistors:a review of recent advances [J].Adv.Mater.,2012,24(22):2945-2986.
[6] KIM Y H,HEO J S,KIM T H,et al..Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films [J].Nature,2012,489(7414):128-132.
[7] LIN Y H,THOMAS S R,FABER H,et al..Al-doped ZnO transistors processed from solution at 120 ℃ [J].Adv.Electron.Mater.,2016,2(6):1600070-1-11.
[8] YU X G,MARKS T J,FACCHETTI A.Metal oxides for optoelectronic applications [J].Nat.Mater.,2016,15(4):383-396.
[9] MA L T,FAN H Q,TIAN H L,et al..The n-ZnO/n-In2O3 heterojunction formed by a surface-modification and their potential barrier-control in methanal gas sensing [J].Sens.Actuators B—Chem.,2016,222:508-516.
[10] FABER H,DAS S,LIN Y H,et al..Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution [J].Sci.Adv.,2017,3(3):e1602640-1-9.
[11] HWANG J D,YANG C C,CHU C M.MgZnO/ZnO two-dimensional electron gas photodetectors fabricated by radio frequency sputtering [J].ACS Appl.Mater.Interfaces,2017,9(28):23904-23908.
[12] KHIM D,LIN Y H,NAM S,et al..Modulation-doped In2O3/ZnO heterojunction transistors processed from solution [J].Adv.Mater.,2017,29(19):1605837-1-7.
[13] ?ZGüR ü,ALIVOV Y I,LIU C,et al..A comprehensive review of ZnO materials and devices [J].J.Appl.Phys.,2005,98(4):041301-1-103.
[14] TETZNER K,ISAKOV I,REGOUTZ A,et al..The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors [J].J.Mater.Chem.C,2017,5(1):59-64.
[15] LIN Y H,FABER H,LABRAM J G,et al..High electron mobility thin-film transistors based on solution-processed semiconducting metal oxide heterojunctions and quasi-superlattices [J].Adv.Sci.,2015,2(7):1500058-1-12.
[16] LEE M,JO J W,KIM Y J,et al..Corrugated heterojunction metal-oxide thin-film transistors with high electron mobility via vertical interface manipulation [J].Adv.Mater.,2018,30(40):1804120.
[17] KRAUSMANN J,SANCTIS S,ENGSTLER J,et al..Charge transport in low-temperature processed thin-film transistors based on indiumoxide/zinc oxide heterostructures [J].ACS Appl.Mater.Interfaces,2018,10(24):20661-20671.