强磁场对不同厚度Fe_(80)Ni_(20)薄膜的微观结构及磁性能的影响
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摘要
有无6 T强磁场条件下利用分子束气相沉积方法制备了不同厚度的Fe80Ni20薄膜.研究发现,薄膜的面内矫顽力随厚度增加而降低且符合Neel理论;矩形比随厚度的增加先快速增大后缓慢降低;6 T磁场抑制了颗粒团聚及异常长大,并降低了薄膜表面的粗糙度,这使薄膜的矫顽力要小于无磁场作用的薄膜,矩形比大于无磁场作用的薄膜;而且薄膜在垂直于基片表面的6 T磁场作用下由0 T下的面内磁各向异性转变为磁各向同性.
Fe80 Ni20 thin films with different thickness values are prepared by the molecular beam vapor deposition technique,respectively,in the cases with applying no magnetic field and with applying a 6 T magnetic field perpendicular to the surface of substrates.Film property studies show that as film thickness value increases,the coercive force in-plane decreases,which is in accordance with Neel theory,and that the squareness ratio first quickly increases,and then slowly decreases.The 6 T magnetic field restrains coalescence and abnormal growth of grains,and reduces surface roughness.Therefore,with 6 T magnetic field applied during the film preparation,the coercive force of thin film is less and the squareness ratio is larger than that with no magnetic field applied.The thin films are anisotropic in-plane with applying no magnetic field,but isotropic with applying a 6 T magnetic field.
Fe80 Ni20 thin films with different thickness values are prepared by the molecular beam vapor deposition technique,respectively,in the cases with applying no magnetic field and with applying a 6 T magnetic field perpendicular to the surface of substrates.Film property studies show that as film thickness value increases,the coercive force in-plane decreases,which is in accordance with Neel theory,and that the squareness ratio first quickly increases,and then slowly decreases.The 6 T magnetic field restrains coalescence and abnormal growth of grains,and reduces surface roughness.Therefore,with 6 T magnetic field applied during the film preparation,the coercive force of thin film is less and the squareness ratio is larger than that with no magnetic field applied.The thin films are anisotropic in-plane with applying no magnetic field,but isotropic with applying a 6 T magnetic field.
引文
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[8]Wang H Y,Mitani S,Motokawa M,Fujimori H 2003 J.Appl.Phys.939145
[9]Zhang L R,Lu H,Liu X,Bai J M,Wei F L 2012 Chin.Phys.B 21037502
[10]Cao X W 1996 Physics 25 552(in Chinese)[曹效文1996物理25552]
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[12]Wang C J,Wang Q,Wang Y Q,Huang J,He J C 2006 Acta Phys.Sin.55 648(in Chinese)[王春江,王强,王亚勤,黄剑,赫冀成2006物理学报55 648]
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[19]Wang Q,Liu Y,Liu T,Gao P F,Wang K 2012 Appl.Phys.Lett.101132406
[20]Wang Q,Lou C S,Liu T,Wei N,Wang C J,He J C 2009 J.Phys.D:Appl.Phys.42 025001
[21]Zhao A K,Ren Z M,Ren S Y,Cao G H,Ren W L 2009 Acta Phys.Sin.58 7101(in Chinese)[赵安昆,任忠鸣,任树洋,操光辉,任维丽2009物理学报58 7101]
[22]Wang Q,Cao Y Z,Li G J,Wang K,Du J J,He J C 2013 Sci.Adv.Mater.5 447
[23]Cao Y Z,Wang Q,Li G J,Du J J,Wu C,He J C 2013 J.Magn.Magn.Mater.332 38
[24]Neel L 1956 J.Phys.Radium 17 250
[25]Qin X Y,Lee J S,Kim J G 1999 J.Appl.Phys.86 2146
[26]Tabakovic I,Inturi V,Riemer S 2002 J.Electrochem.Soc.149 C18
[27]Tabakovic I,Riemer S,Vas’ko V,Sapozhnikov V,Kief M 2003 J.Electrochem.Soc.150 C635
[28]Lloyd J C,Smith R S 1959 J.Appl.Phys.30 274S