短沟道AlGaN/GaN高电子迁移率晶体管的Ⅰ-Ⅴ特性研究
|
摘要
考虑栅电压、漏电压和沟长调制效应影响下,在长沟道高电子迁移率晶体管(HEMT)的Ⅰ-Ⅴ输出特性基础上,引入有效迁移率和有效沟道长度,推导了短沟道AlGaN/GaN HEMT的电流-电压(Ⅰ-Ⅴ)输出特性模型.通过比较栅长为105nm时模型计算结果与实际器件的输出特性,表明推导的短沟道AlGaN/GaN HEMT的Ⅰ-Ⅴ模型与实验结果基本相符,误差小于5%.
By considering the influence of gate,drain voltage and channel length modulation effect,based on the output current-voltage Ⅰ-Ⅴ characteristics of long-channel high electron mobility transistor(HEMT),by further introducing effective mobility and effective channel length,the analytical model of output Ⅰ-Ⅴcharacteristics of short-channel HEMT is derived in this paper.After comparing the results calculated from the derived model with the output characteristics of experimental devices with a gate length of 105 nm,it is found that the derived Ⅰ-Ⅴmodel of short channel AlGaN/GaN HEMT is basically consistent with the experimental results,and the error is less than 5%.
By considering the influence of gate,drain voltage and channel length modulation effect,based on the output current-voltage Ⅰ-Ⅴ characteristics of long-channel high electron mobility transistor(HEMT),by further introducing effective mobility and effective channel length,the analytical model of output Ⅰ-Ⅴcharacteristics of short-channel HEMT is derived in this paper.After comparing the results calculated from the derived model with the output characteristics of experimental devices with a gate length of 105 nm,it is found that the derived Ⅰ-Ⅴmodel of short channel AlGaN/GaN HEMT is basically consistent with the experimental results,and the error is less than 5%.
引文
[1]毕志伟,冯倩,郝跃,等.Al2O3质层厚度对AlGaN/GaN金属氧化物半导体高电子迁移率晶体管性能的影响[J].物理学报,2009,10:7211-7215.
[2]段宝兴,杨银堂,陈敬.F离子注入新型Al0.25Ga0.75N/GaN HEMT器件耐压分析[J].物理学报,2012,22:408-414.
[3]张波,陈万钧,邓小川,等.氮化镓功率半导体技术[J].固体电子学研究与进展,2010,1(30):1-10.
[4]郝跃,张金凤,张进成.氮化镓宽禁带半导体材料与电子器件[M].北京:科学出版社,2013,1:66-74.
[5] Li Sheng.Semiconductor Physical Electronics[M].New York:John Wiley SonsInc,2006.
[3]毕志伟,冯倩,郝跃,等.Al2O3质层厚度对AlGaN/GaN金属氧化物半导体高电子迁移率晶体管性能的影响[J].物理学报,2009,10:7211-7215.
[6]周春宇,张鹤鸣,胡辉勇,等.应变Si NMOSFET漏电流解析模型[J].物理学报,2013,23:304-311.
[7]Li Z D,Paul C T.Channel scaling of hybrid GaN MOS-HEMTs[J].Solid-State Electronics,2011,56:111-115.
[2]段宝兴,杨银堂,陈敬.F离子注入新型Al0.25Ga0.75N/GaN HEMT器件耐压分析[J].物理学报,2012,22:408-414.
[3]张波,陈万钧,邓小川,等.氮化镓功率半导体技术[J].固体电子学研究与进展,2010,1(30):1-10.
[4]郝跃,张金凤,张进成.氮化镓宽禁带半导体材料与电子器件[M].北京:科学出版社,2013,1:66-74.
[5] Li Sheng.Semiconductor Physical Electronics[M].New York:John Wiley SonsInc,2006.
[3]毕志伟,冯倩,郝跃,等.Al2O3质层厚度对AlGaN/GaN金属氧化物半导体高电子迁移率晶体管性能的影响[J].物理学报,2009,10:7211-7215.
[6]周春宇,张鹤鸣,胡辉勇,等.应变Si NMOSFET漏电流解析模型[J].物理学报,2013,23:304-311.
[7]Li Z D,Paul C T.Channel scaling of hybrid GaN MOS-HEMTs[J].Solid-State Electronics,2011,56:111-115.