Ni基硅化物受退火方式影响的研究
|
摘要
硅化镍(NiSi)因具备低硅耗、低电阻率、低热预算、没有明显线宽效应等特性,被广泛应用于源漏极接触部分和栅极与金属的接触部分中。工艺中,加热条件的变化会导致生成不同的Ni基硅化物,均一性也会根据加热方式产生变化,影响器件的性能。对先导工艺中Ni基硅化物在不同工艺流程里不同的固相反应进行了对比分析,研究了低温浸入式退火加高温尖峰退火以及低温浸入式退火加高温激光退火这两种方法对生成Ni基硅化物的影响,发现硅化物电阻值主要取决于低温浸入式退火的温度,硅化物均一性主要取决于高温退火方式。该研究结果对实际工艺加工有参考作用。
NiSi was widely used in the contacts of source-drain and the contacts of gate-metal because of its low silicon consumption, low resistivity, low thermal budget and no line width effect. In the fabrication process, the changes in heating conditions led to generate different Ni based silicides, and the uniformity changed according to the heating methods, which would affect the device's performance. The ultralow temperature annealing and the high temperature laser annealing were compared. The influence of low temperature soak annealing on the thickness and sheet resistance of silicide was analyzed. Analysis of the experiment showed that the low temperature annealing determined the resistivity when the high temperature annealing determined the uniformity. The research results provided a reference for the practical fabrication process.
NiSi was widely used in the contacts of source-drain and the contacts of gate-metal because of its low silicon consumption, low resistivity, low thermal budget and no line width effect. In the fabrication process, the changes in heating conditions led to generate different Ni based silicides, and the uniformity changed according to the heating methods, which would affect the device's performance. The ultralow temperature annealing and the high temperature laser annealing were compared. The influence of low temperature soak annealing on the thickness and sheet resistance of silicide was analyzed. Analysis of the experiment showed that the low temperature annealing determined the resistivity when the high temperature annealing determined the uniformity. The research results provided a reference for the practical fabrication process.
引文
[1] FUTASE T,HASHIKAWA N,KAMINO T,et al.Spike annealing as second rapid thermal annealing to prevent pure nickel silicide from decomposing on a gate [J].IEEE Trans Semicond Manufac,2009,22(4):475-481.
[2] KNOLL L,ZHAO Q T,HABICHT S,et al.Ultrathin Ni silicides with low contact resistance on strained and unstrained silicon [J].IEEE Elec Dev Lett,2010,31(4):350-352.
[3] KUDO S,HIROSE Y,FUTASE T,et al.Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices [C] // IEEE Int Reliab Phys Symp.Montreal,Canada.2009:311-316.
[4] 张汝京.纳米集成电路制造工艺 [M].北京:清华大学出版社,2014.
[5] 黄益飞,蒋玉龙,茹国平.镍铝合金硅化反应研究 [C] // 第十五届全国半导体集成电路、硅材料学术会议.重庆,中国.2007:647-649.
[6] LU J P,MILES D,ZHAO J,et al.A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length [C] //Int Elec Dev Meet.San Francisco,CA,USA.2002:371-374.
[7] IWAI H.NiSi salicide technology for scaled CMOS [J].Microelec Engineer,2001,60(1):157-169.
[8] ALAVI M,BOHR M,HICKS J,et al.A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process [C] // Int Elec Dev Meet Tech Dig.Washington D C,USA.1997:855-858.
[9] WANG P S,WENG C W,HSU J H.Enhanced structure for salicide MOSFET [P].USA:US6218716B1,2001-04-17.
[10] 蒋玉龙.固相反应NiSi及其与Si肖特基接触特性研究 [D].上海:复旦大学,2002.
[11] 尚海平,徐秋霞.镍硅化物工艺新进展 [J].微电子学,2009,39(6):824-828.
[12] 陈意维,谢朝景,江怡颖,等.具有镍硅化物的半导体元件与制作镍硅化物的方法 [P].中国:CN1937181A,2007-03-28.
[13] 孔祥涛.65 nm以下CMOS镍硅化物中镍过度扩散的工艺优化 [D].上海:复旦大学,2009.
[2] KNOLL L,ZHAO Q T,HABICHT S,et al.Ultrathin Ni silicides with low contact resistance on strained and unstrained silicon [J].IEEE Elec Dev Lett,2010,31(4):350-352.
[3] KUDO S,HIROSE Y,FUTASE T,et al.Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices [C] // IEEE Int Reliab Phys Symp.Montreal,Canada.2009:311-316.
[4] 张汝京.纳米集成电路制造工艺 [M].北京:清华大学出版社,2014.
[5] 黄益飞,蒋玉龙,茹国平.镍铝合金硅化反应研究 [C] // 第十五届全国半导体集成电路、硅材料学术会议.重庆,中国.2007:647-649.
[6] LU J P,MILES D,ZHAO J,et al.A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length [C] //Int Elec Dev Meet.San Francisco,CA,USA.2002:371-374.
[7] IWAI H.NiSi salicide technology for scaled CMOS [J].Microelec Engineer,2001,60(1):157-169.
[8] ALAVI M,BOHR M,HICKS J,et al.A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process [C] // Int Elec Dev Meet Tech Dig.Washington D C,USA.1997:855-858.
[9] WANG P S,WENG C W,HSU J H.Enhanced structure for salicide MOSFET [P].USA:US6218716B1,2001-04-17.
[10] 蒋玉龙.固相反应NiSi及其与Si肖特基接触特性研究 [D].上海:复旦大学,2002.
[11] 尚海平,徐秋霞.镍硅化物工艺新进展 [J].微电子学,2009,39(6):824-828.
[12] 陈意维,谢朝景,江怡颖,等.具有镍硅化物的半导体元件与制作镍硅化物的方法 [P].中国:CN1937181A,2007-03-28.
[13] 孔祥涛.65 nm以下CMOS镍硅化物中镍过度扩散的工艺优化 [D].上海:复旦大学,2009.