一种带有注入增强缓冲层的4H-SiC GTO晶闸管
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摘要
门极可关断(GTO)晶闸管是应用在脉冲功率领域中的一种重要的功率器件。目前,由于常规SiC GTO晶闸管的阴极注入效率较低,限制了器件性能的提高。提出了一种带有注入增强缓冲层的碳化硅门极可关断(IEB-GTO)晶闸管结构,相比于常规GTO晶闸管结构,该结构有着更高的阴极注入效率,从而减小了器件的导通电阻和功耗。仿真结果表明,当导通电流为1 000 A/cm~2时,IEB-GTO晶闸管的比导通电阻比常规GTO晶闸管下降了约45.5%;在脉冲峰值电流为6 000 A、半周期为1 ms的宽脉冲放电过程中,器件的最大导通压降比常规GTO晶闸管降低了约58.5%。
Gate turn-off(GTO) thyristor is an important power device applied in pulse power area. At present, due to the low cathode injection efficiency of conventional SiC gate turn-off(SiC GTO) thyristor, the improvement of device performance is limited. A 4 H-SiC GTO thyristor with injection enhanced buffer layer(IEB-GTO) was proposed. Compared with the conventional GTO(CON-GTO) thyristor structure, the proposed one had higher cathode injection efficiency, thus the on-resistance and power consumption of the device were decreased. The simulation results show that the specific on-resistance of the IEB-GTO thyristor is reduced by 45.5% approximately compared with the CON-GTO thyristor when the conduction current is 1 000 A/cm~2. And the maximum conduction voltage drop is reduced by 58.5% approximately compared with the CON-GTO thyristor in the process of wide-pulse discharge with peak current of 6 000 A and half sinusoidal of 1 ms.
Gate turn-off(GTO) thyristor is an important power device applied in pulse power area. At present, due to the low cathode injection efficiency of conventional SiC gate turn-off(SiC GTO) thyristor, the improvement of device performance is limited. A 4 H-SiC GTO thyristor with injection enhanced buffer layer(IEB-GTO) was proposed. Compared with the conventional GTO(CON-GTO) thyristor structure, the proposed one had higher cathode injection efficiency, thus the on-resistance and power consumption of the device were decreased. The simulation results show that the specific on-resistance of the IEB-GTO thyristor is reduced by 45.5% approximately compared with the CON-GTO thyristor when the conduction current is 1 000 A/cm~2. And the maximum conduction voltage drop is reduced by 58.5% approximately compared with the CON-GTO thyristor in the process of wide-pulse discharge with peak current of 6 000 A and half sinusoidal of 1 ms.
引文
[1] OGUNNIYI A, O'BRIEN H, SCOZZIE C J, et al. Narrow and wide pulse evaluation of silicon carbide SGTO modules[C]// Proceedings of IEEE Pulsed Power Conference. Chicago, IL, USA, 2012:786-790.
[2] 王俊, 张渊, 李宗鉴,等. SiC GTO晶闸管技术现状及发展[J]. 大功率变流技术, 2016(5):7-12.WANG J, ZHANG Y, LI Z J, et al. Technology status and development of SiC GTO thyristor [J]. High Power Converter Technology, 2016(5):7-12(in Chinese).
[3] JOHANNESSON D, NAWAZ M, JACOBS K, et al. Potential of ultra-high voltage silicon carbide semiconductor devices[C] // Proceedings of the 4th Workshop on Wide Bandgap Power Devices and Applications. Fayetteville. AR, USA, 2016:253-258.
[4] SONG X Q, HUANG A Q, LEE M C, et al. Theoretical and experimental study of 22 kV SiC emitter turn-off (ETO) thyristor[J]. IEEE Transactions on Power Electronics, 2017, 32(8):6381-6393.
[5] RYU S, LICHTENWALNER D, van BRUNT E V, et al. Impact of carrier lifetime enhancement using high tempe-rature oxidation on 15 kV 4H-SiC p-GTO thyristor[J]. Materials Science Forum, 2017, 897:587-590.
[6] 陈星弼, 张庆中, 陈勇. 微电子器件[M]. 3版. 北京: 电子工业出版社, 2011:78.
[7] OGUNNIYI A, O'BRIEN H, HINOJOSA M, et al. Pulsed power evaluation and simulation of high voltage 4H-SiC p-Type SGTOs[C]//Proceedings of Lester Eastman Conference. Bethlehem, PA, USA, 2016:55-58.
[8] LIN L, ZHAO J H. Fabrication and characterization of 4H-SiC 6 kV gate turn-off thyristor[J]. Materials Science Forum, 2012, 717/720:1163-1166.
[9] SUNG W, HUANG A Q, BALIGA B J, et al. The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor[C]// Proceedings of IEEE International Symposium on Power Semiconductor Devices & IC’s. Hong Kong, China, 2015:257-260.
[10] ZHOU C N, YUE R F, WANG Y, et al. 10 kV 4H-SiC gate turn-off thyristors with space-modulated buffer trench three-step JTE[J]. IEEE Electron Device Letters, 2018,39(8):1199-1202.
[11] ADOLPH B. Thyristor physics[M].New York: Springer-Verlag,1976:50-67.
[12] OGUNNIYI A, SCHROCK J, HINOJOSA M, et al. Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs[J]. Materials Science Forum, 2017, 897:575-578.
[2] 王俊, 张渊, 李宗鉴,等. SiC GTO晶闸管技术现状及发展[J]. 大功率变流技术, 2016(5):7-12.WANG J, ZHANG Y, LI Z J, et al. Technology status and development of SiC GTO thyristor [J]. High Power Converter Technology, 2016(5):7-12(in Chinese).
[3] JOHANNESSON D, NAWAZ M, JACOBS K, et al. Potential of ultra-high voltage silicon carbide semiconductor devices[C] // Proceedings of the 4th Workshop on Wide Bandgap Power Devices and Applications. Fayetteville. AR, USA, 2016:253-258.
[4] SONG X Q, HUANG A Q, LEE M C, et al. Theoretical and experimental study of 22 kV SiC emitter turn-off (ETO) thyristor[J]. IEEE Transactions on Power Electronics, 2017, 32(8):6381-6393.
[5] RYU S, LICHTENWALNER D, van BRUNT E V, et al. Impact of carrier lifetime enhancement using high tempe-rature oxidation on 15 kV 4H-SiC p-GTO thyristor[J]. Materials Science Forum, 2017, 897:587-590.
[6] 陈星弼, 张庆中, 陈勇. 微电子器件[M]. 3版. 北京: 电子工业出版社, 2011:78.
[7] OGUNNIYI A, O'BRIEN H, HINOJOSA M, et al. Pulsed power evaluation and simulation of high voltage 4H-SiC p-Type SGTOs[C]//Proceedings of Lester Eastman Conference. Bethlehem, PA, USA, 2016:55-58.
[8] LIN L, ZHAO J H. Fabrication and characterization of 4H-SiC 6 kV gate turn-off thyristor[J]. Materials Science Forum, 2012, 717/720:1163-1166.
[9] SUNG W, HUANG A Q, BALIGA B J, et al. The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor[C]// Proceedings of IEEE International Symposium on Power Semiconductor Devices & IC’s. Hong Kong, China, 2015:257-260.
[10] ZHOU C N, YUE R F, WANG Y, et al. 10 kV 4H-SiC gate turn-off thyristors with space-modulated buffer trench three-step JTE[J]. IEEE Electron Device Letters, 2018,39(8):1199-1202.
[11] ADOLPH B. Thyristor physics[M].New York: Springer-Verlag,1976:50-67.
[12] OGUNNIYI A, SCHROCK J, HINOJOSA M, et al. Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs[J]. Materials Science Forum, 2017, 897:575-578.