一种改进型梁-岛-膜压力传感器的研究与设计
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摘要
研究了一种量程为800 kPa的改进型梁-岛-膜结构MEMS压阻式压力传感器,通过与常见的C型和E型结构进行仿真对比,证明这种改进型结构的传感器灵敏度得到了很大提高。采用IntelliSuite仿真分析最大等效应力、挠度和输出电压,得出在中心膜尺寸为2.6 mm×2.6 mm×60μm,梁尺寸为400μm×200μm×60μm,岛尺寸为1.3 mm×1.3 mm×370μm的情况下,该结构具有较高的线性度和灵敏度,同时进行了制版与加工流程定义。为了实现结构的优化,设计了压敏电阻的尺寸和阻值,通过对改进型结构的仿真,确定了获得最大电压输出时压敏电阻的尺寸;并分析比较了同一硅杯尺寸下3种结构不同压力下的最大等效应力、挠度和输出电压分布图,得出改进型结构灵敏度最佳。
A MEMS piezoresistive pressure sensor with improved beam to island membrane structure with a range of 800 kPa was studied.Compared with the common C and E structure,the sensitivity of the improved structure sensor was greatly improved.Analysed by IntelliSuite simulation,when the central film size was 2.6 mm×2.6 mm×60 μm,the beam size was 400 μm×200 μm×60 μm,the island size was 1.3 mm×1.3 mm×370 μm,then the structure had good linearity and high sensitivity.At the same time,the definition of plate making and processing process was carried out.In order to optimize the structure,the size and resistance of varistors were designed.Through the simulation of the improved structure,the size of varistors was obtained when the maximum voltage output was obtained.Meanwhile the maximum equivalent stress,deflection and output voltage distribution map of three kinds of different pressure under the same silicon cup size were analyzed and compared,and the sensitivity of the improved structure is the best.
A MEMS piezoresistive pressure sensor with improved beam to island membrane structure with a range of 800 kPa was studied.Compared with the common C and E structure,the sensitivity of the improved structure sensor was greatly improved.Analysed by IntelliSuite simulation,when the central film size was 2.6 mm×2.6 mm×60 μm,the beam size was 400 μm×200 μm×60 μm,the island size was 1.3 mm×1.3 mm×370 μm,then the structure had good linearity and high sensitivity.At the same time,the definition of plate making and processing process was carried out.In order to optimize the structure,the size and resistance of varistors were designed.Through the simulation of the improved structure,the size of varistors was obtained when the maximum voltage output was obtained.Meanwhile the maximum equivalent stress,deflection and output voltage distribution map of three kinds of different pressure under the same silicon cup size were analyzed and compared,and the sensitivity of the improved structure is the best.
引文
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[2] 尤彩红.硅压阻式微传感器的设计[D].太原:中北大学,2009.
[3] 李丹丹,梁庭,李赛男,等.基于 MEMS 工艺的 SOI 高温压力传感器设计[J].传感技术学报,2015,28(9):1315-1319.
[4] 杜春晖,何常德,葛晓洋,等.MEMS压阻式加速度传感器的优化设计[J].压电与声光,2012,34(6):848-852.
[5] 王伟.SOI高温压力传感器设计及制备技术研究[D].太原:中北大学,2013.
[6] 李旺旺,梁庭,张迪雅,等.SOI压阻式压力传感器敏感结构的优化设计[J].仪表技术与传感器,2016(6):15-18.
[7] 王喆垚.微系统设计与制造[M].北京:清华大学出版社,2008(2):161-178.
[8] 王峰,谭晓兰,张敏亮.压阻式微压力传感器结构参数设计[J].自动化仪表,2013,34(3):83-86.
[9] 刘广玉.微传感器设计制造与应用[M].北京:北京航空航天大学出版社,2008(2):9-10.
[10] CHEN S,ZHU M Q,MA B H,et al.Design and optimization of a micro piezoresistive pressure sensor[C].IEEE International Conference on Nano/micro Engineered and Molecular Systems.IEEE,2008:351-356.
[11] 赵艳平.压力传感器弹性元件的力学性能分析与研究[D].南京:江苏大学,2007.
[12] 潘东阳.基于MEMS技术纳米多晶硅薄膜压力传感器制作及特性研究[D].哈尔滨:黑龙江大学,2014.
[13] 王峰.压阻式微压力传感器的研究[D].北京:北方工业大学,2012.
[14] 杨梅,于炜,张莹,等.梁-膜结构微压传感器研制[J].实验流体力学,2010(2):74-76.
[15] 陈雨,杨继昌,丁建宁.耐高温压力传感器的设计研究[J].机械设计与制造,2008(10):19-21.