工作压强对SiC空心微球结构及性能的影响
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摘要
采用化学气相沉积(CVD)-高温热解法,在不同工作压强条件下,制备了惯性约束聚变靶用SiC空心微球。利用X射线光电子能谱仪、扫描电子显微镜、白光干涉仪、X射线照相机对SiC空心微球的成分、表面形貌、表面粗糙度、球形度以及壁厚均匀性进行了测试与分析。研究结果表明:随工作压强的增加,SiC空心微球的表面均方根粗糙度先减小后增加,当工作压强为15Pa时,表面均方根粗糙度达到最小值98nm;随工作压强的增加,SiC空心微球的球形度未发生明显变化,且均优于97%;而壁厚均匀性则随工作压强的增加先增加后减小,当压强为15Pa时,壁厚均匀性可达95%。
Silicon carbide(SiC)hollow shell was successfully fabricated at different working pressures by chemical vapor deposition(CVD)-pyrolysis,using Si(CH3)4+C4 H8+H2 as the precursor gases.The chemical composition,surface morphology,surface roughness,sphericity and wall thickness uniformity of shells were studied by X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM),white light interferometer(WLI)and X-ray camera,respectively.The results show that the surface root mean square roughness(Rq)of SiC firstly decreases then increases with pressure increase.Rqdecreases to the minimum value of 98 nm when pressure is 15 Pa.Sphericity of SiC does not change significantly with the increase of pressure and thesphericities of all samples are higher than 97%.Wall thickness uniformity of SiC firstly increases then decreases as pressure increases.It increases to 95% when pressure is15 Pa.
Silicon carbide(SiC)hollow shell was successfully fabricated at different working pressures by chemical vapor deposition(CVD)-pyrolysis,using Si(CH3)4+C4 H8+H2 as the precursor gases.The chemical composition,surface morphology,surface roughness,sphericity and wall thickness uniformity of shells were studied by X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM),white light interferometer(WLI)and X-ray camera,respectively.The results show that the surface root mean square roughness(Rq)of SiC firstly decreases then increases with pressure increase.Rqdecreases to the minimum value of 98 nm when pressure is 15 Pa.Sphericity of SiC does not change significantly with the increase of pressure and thesphericities of all samples are higher than 97%.Wall thickness uniformity of SiC firstly increases then decreases as pressure increases.It increases to 95% when pressure is15 Pa.
引文
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[2]刘福,周继承.SiC薄膜力学性能研究[J].武汉理工大学学报,2007,29(10):55-62.LIU Fu,ZHOU Jicheng.Research on mechanical properties of SiC thin-film[J].Journal of Wuhan University of Technology,2007,29(10):55-62(in Chinese).
[3] THEOBALD M,CHICANNE C,BARNOUIN J,et al.Gas etching to obtain germanium doped CHx microshells compatible with the laser Megajoule target specifications[J].Fusion Science and Technology,2006,49(4):757-763.
[4] THEOBALD M,DUMAY B,CHICANNE C,et al.Roughness optimization at high modes for GDP CHx microshells[J].Fusion Science and Technology,2004,45(2):175-179.
[5] HUANG J L,LIU Y S,DU K,et al.Microstructure evolutions of copper doped tungsten coatings for inertial confinement fusion application[J].Fusion Science and Technology,2017,71(2):187-195.
[6]唐翠兰,王涛,黄景林,等.用于ICF的非晶SiC微球制备及微观结构研究[J].原子能科学技术,2017,51(5):949-955.TANG Cuilan,WANG Tao,HUANG Jinglin,et al.Fabrication and microstructure study of amorphous SiC for ICF application[J].Atomic Energy Science and Technology,2017,51(5):949-955(in Chinese).
[7] ZHANG H W,FU Z X,LIN B X,et al.Controlled-growth and characterization of 3C-SiC and6H-SiC films on C-plane sapphire substrates by LPCVD[J].Journal of Alloys and Compounds,2006,426(1-2):290-294.
[8] LEE W H,LIN J C,LEE C,et al.Effects of CH4/SiH4flow ratio and microwave power on the growth ofβ-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200℃[J].Thin Solid Films,2002,405(1/2):17-22.
[9] MOULDER J F,STICKLE W F,SOBOL P E,et al.Handbook of X-ray photoelectron spectroscopy[M].Eden Prairie:Perkin-Elmer,1992.
[10]ZHANG Ling,CHEN Guo,HE Zhibing,et al.Investigation of working pressure on the surface roughness controlling technology of glow discharge polymer films based on the diagnosed plasma[J].Plasma Science and Technology,2017,19(7):075505.
[11]李蕊,何智兵,杨向东,等.工作压强对射频辉光放电H2/C4H8等离子状态的影响[J].物理学报,2013,62(5):058104.LI Rui,HE Zhibing,YANG Xiangdong,et al.Influence of working pressure on the state of H2/C4H8glowing discharge plasma[J].Acta Physica Sinica,2013,62(5):058104(in Chinese).
[12]张钧,常铁强.激光核聚变靶物理基础[M].北京:国防工业出版社,2004.
[13]STEPHENS R B,HANN S W,WILSON D C.Characterization specifications for baseline indirect drive NIF targets[J].Fusion Science and Technology,2002,41(1):226-233.
[14]唐翠兰,王涛,黄景林,等.四甲基硅流量对SiC空心微球成分及性能的影响[J].硅酸盐学报,2017,45(10):1 446-1 453.TANG Cuilan,WANG Tao,HUANG Jinglin,et al.Effect of tetramethyl silane flow rate on composition and properties of SiC hollow microspheres[J].Journal of the Chinese Ceramic Society,2017,45(10):1 446-1 453(in Chinese).
[15]刘梅芳,陈素芬,刘一杨,等.厚壁空心微球的球形度和壁厚均匀性的表征研究[J].强激光与粒子束,2014,26(2):022017.LIU Meifang,CHEN Sufen,LIU Yiyang,et al.Characterization of sphericity and wall thickness uniformity of thick-walled hollow microspheres[J].High Power Laser and Particle Beams,2014,26(2):022017(in Chinese).
[16]徐伟,王涛,吴章文,等.工作压强对空心玻璃微球表面形貌和性能的影响[J].强激光与粒子束,2015,27(12):122004.XU Wei,WANG Tao,WU Zhangwen,et al.Influence of pressure on structure and properties of hollow glass microspheres[J].High Power Laser and Particle Beams,2015,27(12):122004(in Chinese).