高导热氮化铝陶瓷制备技术的研究现状及发展趋势
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摘要
氮化铝陶瓷具有高导热率、高温绝缘性和优良介电性能、良好耐腐蚀性、与半导体Si相匹配的膨胀性能等优点,是理想的电子封装散热材料。本文对氮化铝陶瓷粉体制备、成型工艺、烧结等方面的关键技术做出了总结,其中着重总结了氮化铝陶瓷烧结方面的技术发展现状。最后对高导热氮化铝陶瓷制备技术进行了展望。
Aluminum nitride ceramics has the advantage of high thermal conductivity, high temperature insulation, excellent dielectric properties, good corrosion resistance and matching expansion properties with semiconductor Si, which is an ideal material for electronic packaging. The key technologies of aluminum nitride ceramic powder preparation, molding process and sintering are summarized. This paper focuses on the status of the technological development in the sintering of aluminum nitride ceramics. The key technologies of high thermal conductivity aluminum nitride ceramics are forecasted at the end.
Aluminum nitride ceramics has the advantage of high thermal conductivity, high temperature insulation, excellent dielectric properties, good corrosion resistance and matching expansion properties with semiconductor Si, which is an ideal material for electronic packaging. The key technologies of aluminum nitride ceramic powder preparation, molding process and sintering are summarized. This paper focuses on the status of the technological development in the sintering of aluminum nitride ceramics. The key technologies of high thermal conductivity aluminum nitride ceramics are forecasted at the end.
引文
[1]鲁慧峰,秦明礼,何庆,等.表面处理对氮化铝粉末抗水化性能的影响[J].真空电子技术, 2015,(04):36-38.LU H F, QIN M L, HE Q, et al. Vacuum Electronics, 2015,(04):36-38.
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[3] KOBAYASHI R, NAKAJIMA Y, MOCHIZUKI K, et al.Densification of AlN ceramics by spark plasma sintering under1550℃[J]. Advanced Powder Technology, 2016, 27(3):860-863.
[4] CHEN K, LI Y, ZHANG Y C, et al. Preparation of aluminum nitride power by direct nitridization method with two additives[J]. Materials Science Forum, 2016, 852:390-393.
[5]姜珩,康志君,谢元锋,等.铝粉直接氮化法制备AlN粉末[J].稀有金属, 2013, 37(03):396-400.JIANG YAN, KANG ZHIJUN, XIE Y F, et al. Rare Metals,2013, 37(03):396-400.
[6]许珂洲,宋胜东,张颖,等.碳热还原反应合成AlN粉体的研究[J].硅酸盐通报, 2014, 33(2):342-345.XU Y Z, SONG S D, ZHANG Y, et al. Silicate Bulletin, 2014,33(2):342-345.
[7]赵林,刘亮,魏红康,等.流延成型法制备透明氧化铝陶瓷烧结性能的研究[J].陶瓷学报, 2015,(2):132-137.ZHAO L, LIU L, WEI H K, et al. Journal of Ceramics, 2015,(2):132-137.
[8]郭坚,孙永健,张洪武,等.流延成型用AlN无苯浆料的制备及其性能研究[J].电子元件与材料, 2015,(8):69-72.GUO J, SUN Y J, ZHANG H W, et al. Electronic Components&Materials, 2015,(8):69-72.
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[10]鲁慧峰,秦明礼,储爱民,等.粉末注射成形制备AlN陶瓷[J].真空电子技术, 2013,(4):69-72.LU H F, QIN M L, CHU A M, et al. Vacuum Electronics, 2013,(4):69-72.
[11] LEE H J, KIM S W, RYU S S. Sintering behavior of aluminum nitride ceramics with MgO–Ca O–Al2O3–Si O2, glass additive[J].International Journal of Refractory Metals&Hard Materials,2015, 53:46-50.
[12] CHOI H S, IM H N, KIM Y M, et al. Structural, thermal and mechanical properties of aluminum nitride ceramics with CeO2as a sintering aid[J]. Ceramics International, 2016, 42(10):11519-11524.
[13]牛锛,胡尊彬,李保平,等. AlN陶瓷制备过程中氧化行为研究[J].山东陶瓷, 2010, 33(06):11-13.NIU X, HU Z B, LI B P, et al. Shandong Ceramics, 2010,33(06):11-13.
[14]黄小丽,郑永红,胡晓青.复合助剂对AlN陶瓷低温烧结的影响[J].北京信息科技大学学报(自然科学版), 2005, 20(02):11-14.HUANG X L, ZHENG Y H, HU X Q. Journal of Beijing University of Information Science and Technology, 2005,20(02):11-14.
[15] SHAHIEN M, YAMADA M, FUKUMOTO M, et al. Reactive plasma-sprayed aluminum nitride-based coating thermal conductivity[J]. Journal of Thermal Spray Technology, 2015,24(8):1385-1398.
[16]王利英,李小雷,宿太超,等.温度对高压烧结AlN陶瓷热导率的影响[J].功能材料, 2012, 43(04):450-453.WANG L Y, LI X L, SU T C, et al. Journal of Functional Materials, 2012, 43(04):450-453.
[17]张浩,郭军,党军杰,等.烧结温度对AlN陶瓷结构与性能的影响[J].中国陶瓷, 2015, 51(07):54-58.ZHANG H, GUO J, DANG J J, et al. China Ceramics, 2015,51(07):54-58.
[18]王磊. AlN陶瓷烧结炉温度均匀性对烧结产品质量影响的研究[J].电子工业专用设备, 2010, 39(6):34-36.WANG L. Special Equipment for the Electronic Industry, 2010,39(6):34-36.
[19]向常虎,李晨辉,刘凯,等.不同烧结气氛下制备的AlN陶瓷结构和电性能的差异[J].化学与生物工程, 2013, 30(3):78-81.XIANG C H, LI C H, LIU K, et al. Chemical and Biological Engineering, 2013, 30(3):78-81.
[20]孙悦,杜学丽.烧结气氛对AlN陶瓷结构与性能的影响[J].天津理工大学学报, 2010, 26(06):15-18.SUN Y,DU X L. Journal of Tianjin University of Technology,2010, 26(06):15-18.
[21] XUE J, DONG M, LI J, et al. Gelcasting of aluminum nitride ceramics[J]. Journal of the American Ceramic Society, 2010,93(4):928-930.
[2] HIMPEL G, HERRMANN M, H?HN S. Comparison of the high-temperature corrosion of aluminium nitride, alumina,magnesia and zirconia ceramics by coal ashes[J]. Ceramics International, 2015, 41(7):8288-8298.
[3] KOBAYASHI R, NAKAJIMA Y, MOCHIZUKI K, et al.Densification of AlN ceramics by spark plasma sintering under1550℃[J]. Advanced Powder Technology, 2016, 27(3):860-863.
[4] CHEN K, LI Y, ZHANG Y C, et al. Preparation of aluminum nitride power by direct nitridization method with two additives[J]. Materials Science Forum, 2016, 852:390-393.
[5]姜珩,康志君,谢元锋,等.铝粉直接氮化法制备AlN粉末[J].稀有金属, 2013, 37(03):396-400.JIANG YAN, KANG ZHIJUN, XIE Y F, et al. Rare Metals,2013, 37(03):396-400.
[6]许珂洲,宋胜东,张颖,等.碳热还原反应合成AlN粉体的研究[J].硅酸盐通报, 2014, 33(2):342-345.XU Y Z, SONG S D, ZHANG Y, et al. Silicate Bulletin, 2014,33(2):342-345.
[7]赵林,刘亮,魏红康,等.流延成型法制备透明氧化铝陶瓷烧结性能的研究[J].陶瓷学报, 2015,(2):132-137.ZHAO L, LIU L, WEI H K, et al. Journal of Ceramics, 2015,(2):132-137.
[8]郭坚,孙永健,张洪武,等.流延成型用AlN无苯浆料的制备及其性能研究[J].电子元件与材料, 2015,(8):69-72.GUO J, SUN Y J, ZHANG H W, et al. Electronic Components&Materials, 2015,(8):69-72.
[9] KATE K H, ENNETI R K, ONBATTUVELLI V P, et al.Feedstock properties and injection molding simulations of bimodal mixtures of nanoscale and microscale aluminum nitride[J]. Ceramics International, 2013, 39(6):6887-6897.
[10]鲁慧峰,秦明礼,储爱民,等.粉末注射成形制备AlN陶瓷[J].真空电子技术, 2013,(4):69-72.LU H F, QIN M L, CHU A M, et al. Vacuum Electronics, 2013,(4):69-72.
[11] LEE H J, KIM S W, RYU S S. Sintering behavior of aluminum nitride ceramics with MgO–Ca O–Al2O3–Si O2, glass additive[J].International Journal of Refractory Metals&Hard Materials,2015, 53:46-50.
[12] CHOI H S, IM H N, KIM Y M, et al. Structural, thermal and mechanical properties of aluminum nitride ceramics with CeO2as a sintering aid[J]. Ceramics International, 2016, 42(10):11519-11524.
[13]牛锛,胡尊彬,李保平,等. AlN陶瓷制备过程中氧化行为研究[J].山东陶瓷, 2010, 33(06):11-13.NIU X, HU Z B, LI B P, et al. Shandong Ceramics, 2010,33(06):11-13.
[14]黄小丽,郑永红,胡晓青.复合助剂对AlN陶瓷低温烧结的影响[J].北京信息科技大学学报(自然科学版), 2005, 20(02):11-14.HUANG X L, ZHENG Y H, HU X Q. Journal of Beijing University of Information Science and Technology, 2005,20(02):11-14.
[15] SHAHIEN M, YAMADA M, FUKUMOTO M, et al. Reactive plasma-sprayed aluminum nitride-based coating thermal conductivity[J]. Journal of Thermal Spray Technology, 2015,24(8):1385-1398.
[16]王利英,李小雷,宿太超,等.温度对高压烧结AlN陶瓷热导率的影响[J].功能材料, 2012, 43(04):450-453.WANG L Y, LI X L, SU T C, et al. Journal of Functional Materials, 2012, 43(04):450-453.
[17]张浩,郭军,党军杰,等.烧结温度对AlN陶瓷结构与性能的影响[J].中国陶瓷, 2015, 51(07):54-58.ZHANG H, GUO J, DANG J J, et al. China Ceramics, 2015,51(07):54-58.
[18]王磊. AlN陶瓷烧结炉温度均匀性对烧结产品质量影响的研究[J].电子工业专用设备, 2010, 39(6):34-36.WANG L. Special Equipment for the Electronic Industry, 2010,39(6):34-36.
[19]向常虎,李晨辉,刘凯,等.不同烧结气氛下制备的AlN陶瓷结构和电性能的差异[J].化学与生物工程, 2013, 30(3):78-81.XIANG C H, LI C H, LIU K, et al. Chemical and Biological Engineering, 2013, 30(3):78-81.
[20]孙悦,杜学丽.烧结气氛对AlN陶瓷结构与性能的影响[J].天津理工大学学报, 2010, 26(06):15-18.SUN Y,DU X L. Journal of Tianjin University of Technology,2010, 26(06):15-18.
[21] XUE J, DONG M, LI J, et al. Gelcasting of aluminum nitride ceramics[J]. Journal of the American Ceramic Society, 2010,93(4):928-930.