MPCVD侧面扩展生长单晶金刚石形貌及光谱
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摘要
采用微波等离子体化学气相沉积(MPCVD)法同质生长了边缘无多晶聚集的金刚石,详细研究了其表面与侧面的生长情况。利用微分干涉相差显微镜和喇曼光谱仪对边缘无多晶的单晶金刚石进行了表征,结果表明,通过优化侧面温度的控制可以实现4个侧面呈单晶生长,生长结束后金刚石尺寸由原始的3.50 mm×3.50 mm扩展到4.50 mm×4.52 mm,并且侧面扩展部分与表面区域的喇曼特征峰半高宽均在2.2~2.4 cm~(-1)附近,呈现出较高的结晶质量,而光致发光光谱测试结果表明,晶体内部有氮和硅杂质存在。对于金刚石同质生长而言,金刚石4个侧面同时生长将会提高单晶生长效率和金刚石单片尺寸。
Single crystal diamond without any polycrystal on the lateral faces was successfully grown on a homogeneous diamond seed by microwave plasma chemical vapor deposition( MPCVD) method,and the morphological evolution on the surface and lateral faces of the as-grown diamond was carefully investigated. The single crystal diamond without any polycrystal on the lateral faces was characterized by differential interference contrast microscope and Raman spectrometers. The results show that by optimizing the control of temperature,the growth of single crystal diamond was realized on the four lateral faces and the size of the as-grown diamond was increased from originally 3. 50 mm× 3. 50 mm to 4. 50 mm ×4. 52 mm after growth. The full width at half maximum( FWHMs) of Raman characteristic peaks on four lateral enlarged faces and the top surface are approximately 2. 2-2. 4 cm~(-1),indicating a superior crystalline quality of diamond. However,photoluminescence spectra test result demonstrates the existence of nitrogen and silicon impurities in the as-grown diamond. For diamond homogeneous growth,simultaneous growth of the four lateral faces of the diamond will increase single crystal diamond growth efficiency and size of the diamond chip.
Single crystal diamond without any polycrystal on the lateral faces was successfully grown on a homogeneous diamond seed by microwave plasma chemical vapor deposition( MPCVD) method,and the morphological evolution on the surface and lateral faces of the as-grown diamond was carefully investigated. The single crystal diamond without any polycrystal on the lateral faces was characterized by differential interference contrast microscope and Raman spectrometers. The results show that by optimizing the control of temperature,the growth of single crystal diamond was realized on the four lateral faces and the size of the as-grown diamond was increased from originally 3. 50 mm× 3. 50 mm to 4. 50 mm ×4. 52 mm after growth. The full width at half maximum( FWHMs) of Raman characteristic peaks on four lateral enlarged faces and the top surface are approximately 2. 2-2. 4 cm~(-1),indicating a superior crystalline quality of diamond. However,photoluminescence spectra test result demonstrates the existence of nitrogen and silicon impurities in the as-grown diamond. For diamond homogeneous growth,simultaneous growth of the four lateral faces of the diamond will increase single crystal diamond growth efficiency and size of the diamond chip.
引文
[1]IKEDA K,UMEZAWA H,RAMANUJAM K,et al.Thermally stable schottky barrier diode by Ru/diamond[J].Applied Physics Express,2009,2(2):1202-1206.
[2]BALDUCCI A,MARINELLI M,MILANI E,et al.Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition[J].Applied Physics Letters,2005,86(19):193509-1-193509-4.
[3]李彬,李宏,吕反修,等.金刚石单晶的化学气相沉积制备及其在粒子探测器件中的应用[J],人工晶体学,2012,41(s):289-294.LI B,LI H,LF X,et al.Growth of CVD diamond single crystalline and its based particle detector[J].Journalof Synthetic Crystals,2012,41(s):289-294(in Chinese).
[4]袁明文.金刚石电子器件的研究进展[J].微纳电子技术,2012,49(10):643-649.YUAN M W.Research progress of diamond based electronic devices[J].Micronanoelectronic Technology,2012,49(10):643-649(in Chinese).
[5]FENG Z B,CHAYAHARA A,MOKUNO Y,et al.Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD[J].Diamond&Related Materials,2010,19(2):171-173.
[6]CHEN J,WANG G,QI C,et al.Morphological and structural evolution on the lateral face of the diamond seed by MPCVD homoepitaxial deposition[J].Journal of Crystal Growth,2018,484:1-6.
[7]BAUER T,SCHRECK M,STERNSCHULTE H,et al.High growth rate homoepitaxial diamond deposition on offaxis substrates[J].Diamond&Related Materials,2005,14(3):266-271.
[8]TALLAIRE A,ACHARD J,BRINZA O,et al.Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates[J].Diamond&Related Materials,2013,33(3):71-77.
[9]严垒,马志斌,陈林,等.MPCVD法同质外延生长单晶金刚石[J].新型炭材料,2017,32(1):92-96.YAN L,MA Z B,CHEN L,et al.Homoepitaxial growth of single crystal diamond by microwave plasma chemical vapor deposition[J].New Carbon Materials,2017,32(1):92-96.
[10]TAKEUCHI D,WATANABE H,YAMANAKA S,et al.Defects in device grade homoepitaxial diamond thin films grown with ultra-low CH4/H2conditions by microwaveplasma chemical vapor deposition[J].Physica Status Solidi,1999,174(1):101-115.
[11]HAYASHI K,YAMANAKA S,OKUSHI H,et al.Homoepitaxial diamond films with large terraces[J].Applied Physics Letter,1996,68(9):1220-1222.
[12]NAD S,GU Y,ASMUSSEN J.Growth strategies for large and high quality single crystal diamond substrates[J].Diamond&Related Materials,2015,60(11):26-34.
[13]SHU G,DAI B,RALCHENKO V G,et al.Verticalsubstrate epitaxial growth of single-crystal diamond by microwave plasma-assisted chemical vapor deposition[J].Journal of Crystal Growth,2018,486:104-110.
[14]ACHARD J,SILVA F,TALLAIRE A,et al.Review article:high quality MPACVD diamond single crystal growth:high microwave power density regime[J].Journal of Physics:D,2007,40(20):6175-6188.
[15]DUNST S,STERNSCHULTE H,SCHRECK M.Growth rate enhancement by nitrogen in diamond chemical vapor deposition—a catalytic effect[J].Applied Physics Letters,2009,94(22):34-39.
[16]ASHKINAZI E E,KHMELNITSKII R A,SEDOV V S,et al.Morphology of diamond layers grown on different facets of single crystal diamond substrates by a microwave plasma CVD in CH4-H2-N2gas mixtures[J].Crystals,2017,7(6):166.
[17]WILLEMS B,TALLAIRE A,ACHARD J.Optical study of defects in thick undoped CVD synthetic diamond layers[J].Diamond&Related Materials,2014,41(1):25-33.
[2]BALDUCCI A,MARINELLI M,MILANI E,et al.Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition[J].Applied Physics Letters,2005,86(19):193509-1-193509-4.
[3]李彬,李宏,吕反修,等.金刚石单晶的化学气相沉积制备及其在粒子探测器件中的应用[J],人工晶体学,2012,41(s):289-294.LI B,LI H,LF X,et al.Growth of CVD diamond single crystalline and its based particle detector[J].Journalof Synthetic Crystals,2012,41(s):289-294(in Chinese).
[4]袁明文.金刚石电子器件的研究进展[J].微纳电子技术,2012,49(10):643-649.YUAN M W.Research progress of diamond based electronic devices[J].Micronanoelectronic Technology,2012,49(10):643-649(in Chinese).
[5]FENG Z B,CHAYAHARA A,MOKUNO Y,et al.Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD[J].Diamond&Related Materials,2010,19(2):171-173.
[6]CHEN J,WANG G,QI C,et al.Morphological and structural evolution on the lateral face of the diamond seed by MPCVD homoepitaxial deposition[J].Journal of Crystal Growth,2018,484:1-6.
[7]BAUER T,SCHRECK M,STERNSCHULTE H,et al.High growth rate homoepitaxial diamond deposition on offaxis substrates[J].Diamond&Related Materials,2005,14(3):266-271.
[8]TALLAIRE A,ACHARD J,BRINZA O,et al.Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates[J].Diamond&Related Materials,2013,33(3):71-77.
[9]严垒,马志斌,陈林,等.MPCVD法同质外延生长单晶金刚石[J].新型炭材料,2017,32(1):92-96.YAN L,MA Z B,CHEN L,et al.Homoepitaxial growth of single crystal diamond by microwave plasma chemical vapor deposition[J].New Carbon Materials,2017,32(1):92-96.
[10]TAKEUCHI D,WATANABE H,YAMANAKA S,et al.Defects in device grade homoepitaxial diamond thin films grown with ultra-low CH4/H2conditions by microwaveplasma chemical vapor deposition[J].Physica Status Solidi,1999,174(1):101-115.
[11]HAYASHI K,YAMANAKA S,OKUSHI H,et al.Homoepitaxial diamond films with large terraces[J].Applied Physics Letter,1996,68(9):1220-1222.
[12]NAD S,GU Y,ASMUSSEN J.Growth strategies for large and high quality single crystal diamond substrates[J].Diamond&Related Materials,2015,60(11):26-34.
[13]SHU G,DAI B,RALCHENKO V G,et al.Verticalsubstrate epitaxial growth of single-crystal diamond by microwave plasma-assisted chemical vapor deposition[J].Journal of Crystal Growth,2018,486:104-110.
[14]ACHARD J,SILVA F,TALLAIRE A,et al.Review article:high quality MPACVD diamond single crystal growth:high microwave power density regime[J].Journal of Physics:D,2007,40(20):6175-6188.
[15]DUNST S,STERNSCHULTE H,SCHRECK M.Growth rate enhancement by nitrogen in diamond chemical vapor deposition—a catalytic effect[J].Applied Physics Letters,2009,94(22):34-39.
[16]ASHKINAZI E E,KHMELNITSKII R A,SEDOV V S,et al.Morphology of diamond layers grown on different facets of single crystal diamond substrates by a microwave plasma CVD in CH4-H2-N2gas mixtures[J].Crystals,2017,7(6):166.
[17]WILLEMS B,TALLAIRE A,ACHARD J.Optical study of defects in thick undoped CVD synthetic diamond layers[J].Diamond&Related Materials,2014,41(1):25-33.