有源层厚度对氧化铟镓锌薄膜晶体管性能的影响
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摘要
使用磁控溅射法制备了IGZO-TFT,研究有源层厚度对其电学性能的影响。实验结果表明,器件的阈值电压和开关比会随着有源层厚度的增大而减小,而器件的亚阈值摆幅和饱和迁移率则会随有源层厚度的增大而增大。此外,还研究了有源层厚度对器件偏压稳定性的影响。有源层厚度越大的器件,其阈值电压漂移也会越大。这主要与半导体层中所增加的缺陷态密度有关。
IGZO-TFTs with different active layer thicknesses were prepared using magnetron sputtering method. It is observed that with the increasing of active layer thickness, the threshold voltage and on/off ratio decrease, while the subthreshold swing and mobility keep an upward tendency. The variation of threshold voltage shift was studied additionally. The results indicate that the enhancement of active layer thickness has a negative impact on the device stability. It is considered as the consequence of growing trap state density in the semiconductor resulting from the increment of active layer thickness.
IGZO-TFTs with different active layer thicknesses were prepared using magnetron sputtering method. It is observed that with the increasing of active layer thickness, the threshold voltage and on/off ratio decrease, while the subthreshold swing and mobility keep an upward tendency. The variation of threshold voltage shift was studied additionally. The results indicate that the enhancement of active layer thickness has a negative impact on the device stability. It is considered as the consequence of growing trap state density in the semiconductor resulting from the increment of active layer thickness.
引文
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[17]ZHAN R,DONG C,LIU P,et al.Influence of channel layer and passivation layer on the stability of amorphous In Ga Zn O thin film transistors[J].Microelectron Reliab,2013,53(12):1879-1885.
[18]张世玉,柳逢春,喻志农,等.IGZO薄膜溅射功率对IGZO-TFT栅电压不稳定性的影响[J].光学技术,2014,40(5):476-480.
[2]NOMURA K,OHTA H,TAKAGI A,et al.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J].Nature,2004,432(7016):488-492..
[3]马群刚.非主动发光平板显示技术[M].北京:电子工业出版社,2013:105-106.
[4]LIN Y,CHOU J.Temperature effects on a-IGZO thin film transistors using Hf O2 gate dielectric material[J].J Nanomater,2014,2014:1-5.
[5]LEE Y,YEN T,LIN C,et al.Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows[J].Displays,2014,35(3):165-170.
[6]OH S,CHOI G,HWANG H,et al.Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing[J].IEEE T Electron Dev,2013,60(8):2537-2541.
[7]TSAY C,YAN T.Solution processed amorphous In GaZnO semiconductor thin films and transistors[J].J Phys Chem Solids,2014,75(1):142-147.
[8]JEONG S K,KIM M H,LEE S Y,et al.Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping[J].Nanoscale Res Lett,2014,9(1):619.
[9]CHEN A H,CAO H T,ZHANG H Z,et al.Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor[J].Microelectron Eng,2010,87(10):2019-2023.
[10]DING X,ZHANG J,LI J,et al.Influence of the In GaZnO channel layer thickness on the performance of thin film transistors[J].Superlatt Microst,2013,63:70-78.
[11]LIN C,FANG Y,CHANG W,et al.Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor[J].Microelectron Reliab,2014,54(5):905-910.
[12]KAMIYA T,NOMURA K,HOSONO H.Present status of amorphous In-Ga-Zn-O thin-film transistors[J].Sci Technol Adv Mater,2010,11:44305.
[13]JIANKE Y,NINGSHENG X,SHAOZHI D,et al.Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy[J].IEEE T Electron Dev,2011,58(4):1121-1126.
[14]KWON J Y,JEONG J K.Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors[J].Semicond Sci Technol,2015,30(024002):1-16.
[15]KWON J,LEE D,KIM K.Review paper:transparent amorphous oxide semiconductor thin film transistor[J].Electron Mater Lett,2011,7(1):1-11.
[16]YUE L,PU H,LI H,et al.Effect of active layer thickness on device performance of a-LZTO thin-film transistors[J].Superlatt Microst,2013,57:123-128.
[17]ZHAN R,DONG C,LIU P,et al.Influence of channel layer and passivation layer on the stability of amorphous In Ga Zn O thin film transistors[J].Microelectron Reliab,2013,53(12):1879-1885.
[18]张世玉,柳逢春,喻志农,等.IGZO薄膜溅射功率对IGZO-TFT栅电压不稳定性的影响[J].光学技术,2014,40(5):476-480.